X-On Electronics has gained recognition as a prominent supplier of R6024ENJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6024ENJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6024ENJTL ROHM

R6024ENJTL electronic component of ROHM
R6024ENJTL ROHM
R6024ENJTL MOSFETs
R6024ENJTL  Semiconductors

Images are for reference only
See Product Specifications
Part No. R6024ENJTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 10V Drive Nch MOSFET
Datasheet: R6024ENJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.9125 ea
Line Total: USD 3.91 
Availability - 946
Ship by Mon. 05 May to Wed. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
946
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 3.9125
10 : USD 2.8175
25 : USD 2.607
100 : USD 2.09
500 : USD 1.958
1000 : USD 1.881

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6024ENJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6024ENJTL and other electronic components in the MOSFETs category and beyond.

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R6024ENJ Datasheet Nch 600V 24A Power MOSFET llOutline TO-263 V 600V DSS SC-83 R (Max.) 0.165 DS(on) LPT(S) I 24A D P 245W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Basic ordering unit (pcs) 1000 Taping code TL Marking R6024ENJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 24 A C D Continuous drain current *1 T = 100C I 13.0 A C D *2 I Pulsed drain current 72 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V I Avalanche current, repetitive 4.1 A AR *3 E Avalanche energy, single pulse 497 mJ AS *3 E Avalanche energy, repetitive 0.75 mJ AR *4 Power dissipation (T = 25C) P 245 W C D T Junction temperature 150 j T Operating junction and storage temperature range -55 +150 stg www.rohm.com 1/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. R6024ENJ Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.51 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 11.3A GS D Static drain - source *6 R T = 25C - 0.150 0.165 DS(on) j on - state resistance T = 125C - 0.320 - j R Gate resistance f =1MHz, open drain - 6.1 - G www.rohm.com 2/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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