R6025ANZ
Datasheet
Nch 600V 25A Power MOSFET
llOutline
TO-3PF
V
600V
DSS
R (Max.) 0.15
DS(on)
I 25A
D
P
150W
D
llInner circuit
llFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V ) guaranteed to
GSS
be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Packing Tube
Reel size (mm) -
llApplication Tape width (mm) -
Type
Switching Power Supply Basic ordering unit (pcs) 360
Taping code C8
Marking R6025ANZ
llAbsolute maximum ratings (T = 25C)
a
Parameter Symbol Value Unit
Drain - Source voltage V 600 V
DSS
*1
T = 25C I
25 A
C D
Continuous drain current
*1
T = 100C I 12.5 A
C D
*2
I
Pulsed drain current 100 A
D,pulse
V
Gate - Source voltage 30 V
GSS
*3
Avalanche energy, single pulse E 39 mJ
AS
*4
E
Avalanche energy, repetitive 9.7 mJ
AR
*3
Avalanche current I 12.5 A
AR
Power dissipation (T = 25C) P
150 W
c D
Junction temperature T 150
j
Range of storage temperature T -55 to +150
stg
Reverse diode dv/dt dv/dt 15 V/ns
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2014 ROHM Co., Ltd. All rights reserved. 1/13 20140205 - Rev.001
Not Recommended for
New Designs
R6025ANZ
Datasheet
llAbsolute maximum ratings
Parameter Symbol Conditions Values Unit
V = 480V, I = 25A
DS D
Drain - Source voltage slope dv/dt 50 V/ns
T = 125
j
llThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
R
Thermal resistance, junction - case - - 0.83 /W
thJC
Thermal resistance, junction - ambient R - - 40 /W
thJA
T
Soldering temperature, wavesoldering for 10s - - 265
sold
llElectrical characteristics (T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - S ource breakdown
V V = 0V, I = 1mA
600 - - V
(BR)DSS GS D
voltage
Drain - Source avalanche
V
V = 0V, I = 12.5A - 700 - V
(BR)DS GS D
breakdown voltage
V = 600V, V = 0V
DS GS
Zero gate voltage
T = 25C
I
- 0.1 100 A
DSS j
drain current
T = 125C
- - 1000
j
Gate - Source leakage current I V = 30V, V = 0V - - 100 nA
GSS
GS DS
Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V
GS(th)
DS D
V = 10V, I = 12.5A
GS D
Static drain - source
*6
R T = 25C
- 0.12 0.15
j
DS(on)
on - state resistance
T = 125C
- 0.24 -
j
R
Gate input resistance f = 1MHz, open drain - 2.2 -
G
www.rohm.com
2/13
2014 ROHM Co., Ltd. All rights reserved. 20140205 - Rev.001
Not Recommended for
New Designs