R6025FNZ Nch 600V 25A Power MOSFET Datasheet l Outline V 600V DSS TO-3PF R (Max.) 0.18W DS(on) I 25A D (1) (2) P 150W (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 360 Switching Power Supply Taping code C8 Marking R6025FNZ lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 25 A c D Continuous drain current *1 T = 100C A I 12 c D *2 Pulsed drain current I 100 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 42.1 mJ E AS *4 Avalanche energy, repetitive E 9.7 mJ AR *3 Avalanche current I 12.5 A AR Power dissipation (T = 25C) P 150 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.A 1/13 ObsoleteData Sheet R6025FNZ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 25A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.83 C/W thJC Thermal resistance, junction - ambient R - - 40 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12.5A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 0.1 100 DSS j drain current T = 125C - - 100 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 12.5A GS D Static drain - source *6 T = 25C R - 0.14 0.18 W j DS(on) on - state resistance T = 125C - 0.28 - j R Gate input resistance f = 1MHz, open drain - 3.3 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.A 2/13 Obsolete