X-On Electronics has gained recognition as a prominent supplier of R6025FNZC8 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6025FNZC8 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6025FNZC8 ROHM

R6025FNZC8 electronic component of ROHM
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See Product Specifications
Part No.R6025FNZC8
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor 10V Drive Nch MOSFET
Datasheet: R6025FNZC8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 360
Multiples : 360
360 : USD 5.3305
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.9534
10 : USD 4.9549
100 : USD 4.2828
360 : USD 4.0683
720 : USD 3.848
1080 : USD 3.393
2160 : USD 3.393
4680 : USD 3.354
9720 : USD 3.146
N/A

Obsolete
0
MOQ : 11
Multiples : 1
11 : USD 7.9852
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 6.1846
10 : USD 5.8184
50 : USD 5.8184
200 : USD 5.8184
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6025FNZC8 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6025FNZC8 and other electronic components in the MOSFETs category and beyond.

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R6025FNZ Nch 600V 25A Power MOSFET Datasheet l Outline V 600V DSS TO-3PF R (Max.) 0.18W DS(on) I 25A D (1) (2) P 150W (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 360 Switching Power Supply Taping code C8 Marking R6025FNZ lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 25 A c D Continuous drain current *1 T = 100C A I 12 c D *2 Pulsed drain current I 100 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 42.1 mJ E AS *4 Avalanche energy, repetitive E 9.7 mJ AR *3 Avalanche current I 12.5 A AR Power dissipation (T = 25C) P 150 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.A 1/13 ObsoleteData Sheet R6025FNZ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 25A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.83 C/W thJC Thermal resistance, junction - ambient R - - 40 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12.5A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 0.1 100 DSS j drain current T = 125C - - 100 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 12.5A GS D Static drain - source *6 T = 25C R - 0.14 0.18 W j DS(on) on - state resistance T = 125C - 0.28 - j R Gate input resistance f = 1MHz, open drain - 3.3 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.A 2/13 Obsolete

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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