HS8K1 Datasheet 30V Nch+Nch Power MOSFET llOutline Symbol Tr1:Nch Tr2:Nch V 30V 30V DSS HSML3030L10 R (Max.) 14.6m 11.8m DS(on) I 10A 11A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Pb-free lead plating RoHS compliant 3) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8.0 Type Basic ordering unit (pcs) 3000 Taping code TB Marking HS8K1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Nch V Drain - Source voltage 30 30 V DSS Continuous drain current I 10 11 A D *1 I Pulsed drain current 40 44 A DP Gate - Source voltage V 20 20 V GSS *2 I Avalanche current, single pulse 10 11 A AS *2 Avalanche energy, single pulse E 7.6 9.1 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/16 20170817 - Rev.005 HS8K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = 1mA 30 - - GS D V I = 1mA, referenced to 25 Tr1 - 28 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = 1mA, referenced to 25 j Tr2 - 28 - D Tr1 V = 24V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = 24V, V = 0V - - 1 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS V = V , I = 1mA Tr1 1.2 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = 1mA Tr2 1.2 - 2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3.87 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = 1mA, referenced to 25 Tr2 - -3.87 - j D V = 10V, I = 10A - 11.2 14.6 GS D Tr1 V = 4.5V, I = 10A - 14.7 20.0 GS D Static drain - source *4 R m DS(on) on - state resistance V = 10V, I = 11A - 9.1 11.8 GS D Tr2 V = 4.5V, I = 11A - 11.9 16.5 GS D Tr1 - 2.0 - Gate resistance R f=1MHz, open drain G Tr2 - 1.9 - Tr1 V = 5V, I = 10A 5 - - DS D Forward Transfer *4 Y S fs Admittance Tr2 V = 5V, I = 11A 6 - - DS D *1 Pw 10s, Duty cycle 1% *2 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/16 20170817 - Rev.005