IMD16AT108 ROHM

Power management (dual digital transistors) IMD16A z Features z Dimensions (Unit : mm) 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5) (6) z Package, marking, and packaging specifications Part No. IMD16A (3) (2) (1) Package SMT6 Marking D16 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Code T108 3000 Basic ordering unit (pieces) z Absolute maximum ratings (Ta=25C) z Inner circuit DTr1 (PNP) (4) (5) (6) Unit Parameter Symbol Limits Supply voltage VCC 50 V R2=22k R1=2.2k 12 VIN Input voltage V DTr1 5 DTr2 500 Output current IC mA R1=100k (3) (2) (1) DTr2 (NPN) Limits Unit Parameter Symbol 50 V Collector-base voltage VCBO 50 Collector-emitter voltage VCEO V Emitter-base voltage VEBO 5 V IC Collector current 100 mA Total Unit Parameter Symbol Limits mW Collector power dissipation Pd 300(TOTAL) C Junction temperature Tj 150 Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. www.rohm.com 2009.06 - Rev.E 1/3 c 2009 ROHM Co., Ltd. All rights reserved. IMD16A Data Sheet z Electrical characteristics (Ta=25C) DTr1 Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) 0.3 VCC= 5V , IO= 100A Input voltage V VI(on) 2 VO= 0.3V , IO= 20mA VO(on) 0.3 V Output voltage IO/II= 50mA / 2.5mA Input current II 3 mA VI= 5V Output current IO(off) 0.5 A VCC= 50V , VI=0V 1 DC current gain GI 82 IO= 50mA , VO= 5V 2 fT 250 MHz Transition frequency VCE= 10V , IE=50mA , f=100MHz Input resistance R1 1.54 2.2 2.86 k Resistance ratio R2 / R1 8 10 12 1 Measured using pulse current. 2 Transition frequency of mounted transistor. DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=50A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA BVEBO 5 V Emitter-base breakdown voltage IE=50A ICBO 0.5 A Collector cutoff current VCB=50V Emitter cutoff current IEBO 0.5 A VEB=4V VCE(sat) 0.3 V Collector-emitter saturation voltage IC/IB=1mA/0.1mA hFE 100 250 600 DC current transfer ratio VCE=5V , IC=1mA fT 250 MHz Transition frequency VCE=10V , IE=5mA , f=100MHz Input resistance R1 70 100 130 k Transition frequency of mounted transistor. www.rohm.com 2009.06 - Rev.E 2/3 c 2009 ROHM Co., Ltd. All rights reserved.