IMD10AT108 ROHM

IMD10A Power management (dual digital transistors) Datasheet Features Dimensions (Unit : mm) 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5) (6) Package, marking, and packaging specifications Part No. IMD10A Package SMT6 (3) (2) (1) Marking D10 Code T108 ROHM : SMT6 Basic ordering unit (pieces) 3000 EIAJ : SC-74 Each lead has same dimensions Absolute maximum ratings (Ta=25C) (4) (5) (6) R2 R1 DTr1 DTr2 R1 (3) (2) (1) Equivalent circuit DTr1 Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN 5 to +5V Collector current IC 500 mA DTr2 Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC Collector current 100 mA Total Limits Unit Parameter Symbol 300(TOTAL) mW Power dissipation Pd 150 C Junction temperature Tj Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. www.rohm.com 1/ 2 c 2013 ROHM Co., Ltd. All rights reserved. 2013.11 - Rev.C IMD10A Datasheet Electrical characteristics (Ta=25C) DTr1 Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) 0.3 VCC= 5V , IO= 100A V Input voltage VI(on) 1.5 VO= 0.3V , IO= 100mA Output voltage VO(on) 0.1 0.3 V IO= 100mA , II= 5mA Input current II 25 mA VI= 2V Output current IO(off) 0.5 A VCC= 50V , VI=0V DC current gain GI 68 IO= 100mA , VO= 5V Transition frequency fT VCE= 10V , IE=50mA , f=100MHz 200 MHz Input resistance R1 70 100 130 Resistance ratio R2 / R1 80 100 120 Transition frequency of the device. DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=50A BVCEO 50 V IC=1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 0.5 A VCB=50V IEBO 0.5 A VEB=4V Emitter cutoff current VCE(sat) 0.3 V IC=10mA , IB=1mA Collector-emitter saturation voltage hFE 100 250 600 VCE=5V , IC=1mA DC current transfer ratio Transition frequency fT 250 MHz VCE=10V , IE= 5mA , f=100MHz Input resistance R1 7 10 13 k Transition frequency of the device. Electrical characteristic curves 1k 1 100 VO = 5V VO = 0.3V IO/II=20/1 Ta=100C 500 500m 50 25C 40C 200 200m 20 Ta=100C 25C 100m 100 10 40C 50 50m 5 Ta= 40C 25C 20 20m 2 100C 10 10m 1 5 5m 500m 2 2m 200m 1 1m 100m 500 1m 2m 5m 10m 20m 50m 100m200m 500m 5001m 2m 5m 10m 20m 50m 100m 200m 500m 500 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.1 DC current gain vs. Fig.2 Output voltage vs. Fig.3 Input voltage vs. Output current Output current characteristics Output current characteristics (ON characteristics) 10m 1 VCC=5V lC/lB=10 5m 1k 500m VCE=5V 2m 500 200m 1m 200 500 100m Ta=100C Ta=100C 25C 100 200 Ta=100C 25C 50m 40C 25C 100 40C 50 40C 20m 50 20 20 10m 10 10 5m 5 5 2m 2 2 1 1m 0 1 2 3 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 100 200 500 1m 2m 5m 10m 20m 50m 100m INPUT VOLTAGE : VI(off) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Output current vs. Fig.6 Collector-emitter saturation voltage Input voltage (OFF characteristics) Fig.5 DC current gain vs. Collector current vs. Collector current www.rohm.com 2/ 2 c 2013 ROHM Co., Ltd. All rights reserved. 2013.11 - Rev.C DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) DC CURRENT GAIN : hFE OUTPUT VOLTAGE : VO(on) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) INPUT VOLTAGE : VI(on) (V)