X-On Electronics has gained recognition as a prominent supplier of IMB2AT110 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMB2AT110 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMB2AT110 ROHM

IMB2AT110 electronic component of ROHM
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See Product Specifications
Part No.IMB2AT110
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL PNP 50V 30MA
Datasheet: IMB2AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.1058 ea
Line Total: USD 1.06 
Availability - 0
MOQ: 10  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3993
10 : USD 0.3212
100 : USD 0.2189
1000 : USD 0.1298
3000 : USD 0.1122
9000 : USD 0.1045
24000 : USD 0.1045
45000 : USD 0.1001

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 10
Multiples : 5
10 : USD 0.1058
50 : USD 0.0855
250 : USD 0.0638
675 : USD 0.0597

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 75
Multiples : 1
75 : USD 0.2613
100 : USD 0.0917

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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We are delighted to provide the IMB2AT110 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMB2AT110 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMB2 / UMB2N / IMB2A General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CC I -100mA C(MAX.) R 47k 1 EMB2 UMB2N R 47k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTA144E chips in a EMT or UMT or SMT package. IMB2A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMB2 / UMB2N IMB2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB2 1616 T2R 180 8 8000 B2 (EMT6) SOT-363 UMB2N 2021 TN 180 8 3000 B2 (UMT6) SOT-457 IMB2A 2928 T110 180 8 3000 B2 (SMT6) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB2 / UMB2N / IMB2A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) *2*3 P EMB2 150 D *2*3 P Power dissipation UMB2N 150 mW D *2*4 IMB2A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -180 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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