IMB9AT110 ROHM

EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A z Features z External dimensions (Unit : mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB9 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3) (5) (2) 3) Transistor elements are independent, eliminating (6) (1) 1.2 interference. 1.6 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 z Structure Abbreviated symbol : B9 Epitaxial planar type UMB9N PNP silicon transistor (Built-in resistor type) 1.25 2.1 The following characteristics apply to both DTr1 and DTr2. 0.1Min. Each lead has same dimensions ROHM : UMT6 z Equivalent circuit EIAJ : SC-88 Abbreviated symbol : B9 EMB9 / UMB9N IMB9A (4) (5) (6) (3) (2) (1) IMB9A R1 R2 R1 R2 DTr1 DTr1 DTr2 DTr2 R1=10k R1=10k R2 R2 R1 R2=47k R2=47k R1 (3) (2) (1) 1.6 (4) (5) (6) 2.8 0.3to0.6 Each lead has same dimensions z Absolute maximum ratings (Ta = 25C) ROHM : SMT6 EIAJ : SC-74 Parameter Symbol Limits Unit Supply voltage VCC 50 V Abbreviated symbol : B9 40 Input voltage VIN V 6 IO 70 Output current mA IC (Max.) 100 1 EMB9, UMB9N 150 (TOTAL) Power Pd mW dissipation 2 IMB9A 300 (TOTAL) Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. 1/2 0.15 0.3 0.2 0.15 0.13 0.22 (5) ( ) (5) (6) 4 ( ) ( ) 4 6 0to0.1 0to0.1 ( ) ( ) (1) 3 2 ( ) (3) 1 (2) 0.5 0.5 0.8 0.95 0.95 0.65 0.65 0.7 1.0 0.5 1.9 1.1 1.6 2.9 0.9 1.3 2.0EMB9 / UMB9N / IMB9A Transistors z Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Parameter Conditions VI (off) 0.3 VCC=5V, IO=100A V Input voltage VI (on) 1.4 VO=0.3V, IO=1mA Output voltage VO (on) 0.1 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V IO (off) 0.5 A Output current VCC=50V, VI=0V DC current gain GI 68 VO=5V, IO=5mA Transition frequency fT 250 MHz VCE=10mA, IE=5mA, f=100MHz R1 7 10 13 k Input resistance Resistance ratio R2 / R1 3.7 4.7 5.7 Transition frequency of the device z Packaging specifications Package Taping Code T2R TN T148 Basic ordering 8000 3000 3000 Type unit (pieces) EMB9 UMB9N IMB9A z Electrical characteristic curves 100 10m 1k VO=0.3V VCC=5V VO=5V 5m 50 500 Ta=100C 25C 2m 40C 200 20 1m 10 500 100 Ta=100C 5 200 50 Ta=40C 25C 25C 100 40C 2 100C 20 50 1 10 20 10 500m 5 5 200m 2 2 100m 1 1 100 2005001m 2m 5m 10m 20m 50m 100m 0 0.5 1 1.5 2 2.5 3 1002005001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output (ON characteristics) (OFF characteristics) current 1000m lO/lI =20 500m Ta=100C 200m 25C 40C 100m 50m 20m 10m 5m 2m 1m 100 2005001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/2 OUTPUT VOLTAGE : VO (on) (V) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI