IMB7AT108 ROHM

IMB7A Transistors General purpose (dual digital transistors) IMB7A z External dimensions (Unit : mm) z Features 1) Two DTA143T chips in a SMT package. z Circuit diagram 1.6 R1 2.8 R1 0.3to0.6 ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V VCEO 50 V Collector-emitter voltage Emitter-base voltage VEBO 5 V IC 100 mA Collector current Collector power dissipation Pc 300(TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. z Package, marking, and packaging specifications Type IMB7A Package SMT6 Marking B7 Code T108 Basic ordering unit (pieces) 3000 Rev.A 1/2 0.15 0.3 ( ) (4) (5) 6 0to0.1 ( ) ( ) (1) 3 2 0.8 0.95 0.95 1.9 1.1 2.9IMB7A Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC= 50A BVCEO Collector-emitter breakdown voltage 50 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A ICBO Collector cutoff current 0.5 A VCB= 50V Emitter cutoff current IEBO 0.5 A VEB= 4V hFE 100 250 600 VCE/IC= 5V/1mA DC current transfer ratio VCE(sat) 0.3 V Collector-emitter saturation voltage IC/IB= 5mA /0.25mA Input resistance R1 3.29 4.7 6.11 k Rev.A 2/2