X-On Electronics has gained recognition as a prominent supplier of SCT3160KLHRC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3160KLHRC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3160KLHRC11 ROHM

SCT3160KLHRC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3160KLHRC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N
Datasheet: SCT3160KLHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.166 ea
Line Total: USD 12.17 
Availability - 204
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
204
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 12.166
25 : USD 10.252
100 : USD 9.856
900 : USD 9.845
2700 : USD 9.834

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3160KLHRC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3160KLHRC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3160KLHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 1200V DSS R (Typ.) 160m DS(on) *1 17A I D P 103W (3) D (2) (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Tube Packing lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3160KL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 1200 V DSS *1 T = 25C I 17 A c D Continuous Drain current *1 T = 100C I 12 A c D *2 Pulsed Drain current I 42 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300nsec) -4 to +26 V V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3160KLHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.001 TSZ22111 14001 Not Recommended for New DesignsSCT3160KLHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 1200 - - V (BR)DSS j voltage T = -55C 1200 - - j V = 0V, V =1200V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j I V = , V = 0V Gate - Source leakage current +22V - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -4V , V = 0V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 2.5mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 5A GS D Static Drain - Source *5 T = 25C R - 160 208 m j DS(on) on - state resistance T = 150C - 272 - j Gate input resistance R f = 1MHz, open drain - 18 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 1.12 1.46 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.11E-01 8.73E-04 th1 th1 R C 7.09E-01 K/W 5.10E-03 Ws/K th2 th2 R C 3.01E-01 2.94E-02 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3160KLHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.001 TSZ22111 15001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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