X-On Electronics has gained recognition as a prominent supplier of RQ5L035GNTCL MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ5L035GNTCL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ5L035GNTCL ROHM

RQ5L035GNTCL electronic component of ROHM
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See Product Specifications
Part No.RQ5L035GNTCL
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET NCH 60V 3.5A SMALL SIGNAL
Datasheet: RQ5L035GNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7188 ea
Line Total: USD 0.72

Availability - 3548
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3548
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7188
10 : USD 0.6291
100 : USD 0.4451
500 : USD 0.383
1000 : USD 0.3346
3000 : USD 0.3024
6000 : USD 0.2956
9000 : USD 0.2852
24000 : USD 0.2829

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5L035GNTCL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5L035GNTCL and other electronic components in the MOSFET category and beyond.

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RQ5L035GN Datasheet Nch 60V 3.5A Small Signal MOSFET llOutline SOT-346T V 60V DSS SC-96 R (Max.) 50m DS(on) TSMT3 I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT3) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TCL Marking GB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.5 A AS *2 E Avalanche energy, single pulse 4.6 mJ AS *3 P 1.0 W D Power dissipation *4 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ5L035GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 /W thJA Thermal resistance, junction - ambient *4 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V V = V , I = 50A Gate threshold voltage 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.5A - 38 50 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 3.5A - 52 75 GS D R Gate resistance f = 1MHz, open drain - 3.5 - G Forward Transfer *5 Y V = 5V, I = 3.5A 3.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 0.5mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic boad (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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