X-On Electronics has gained recognition as a prominent supplier of RQ6C050BCTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6C050BCTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6C050BCTCR ROHM

RQ6C050BCTCR electronic component of ROHM
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See Product Specifications
Part No.RQ6C050BCTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -20V -5A Si MOSFET
Datasheet: RQ6C050BCTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7898 ea
Line Total: USD 0.79 
Availability - 3221
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.7348
30 : USD 0.689
100 : USD 0.6433
500 : USD 0.6219
1000 : USD 0.6137

3221
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7898
10 : USD 0.6281
100 : USD 0.4521
500 : USD 0.3751
1000 : USD 0.3575
3000 : USD 0.3113
24000 : USD 0.3058

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ6C050BCTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6C050BCTCR and other electronic components in the MOSFETs category and beyond.

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RQ6C050BC Datasheet Pch -20V -5A Power MOSFET llOutline SOT-457T V -20V DSS SC-95 R (Max.) 36m DS(on) TSMT6 I 5.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (TSMT6) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Load switch Taping code TCR Car Accessory (Navigation, Audio,etc) Marking JL llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS *1 Continuous drain current I 5.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 8 V GSS *3 Avalanche current, single pulse I -5.0 A AS *3 E Avalanche energy, single pulse 8.9 mJ AS *4 P 1.25 W D Power dissipation *5 P 0.95 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180509 - Rev.003 RQ6C050BC Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 100 /W thJA Thermal resistance, junction - ambient *5 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -10.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -0.5 - -1.2 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 1.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5A - 27 36 GS D Static drain - source *6 R V = -2.5V, I = -5A - 35 47 m DS(on) GS D on - state resistance V = -1.8V, I = -1.2A - 48 77 GS D Gate resistance R f = 1MHz, open drain - 11 - G Forward Transfer *6 Y V = -5V, I = -5A 5.5 - - S fs DS D Admittance *1 Vgs 2.5V, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.5mH, V = -10V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2/11 20180509 - Rev.003 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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