X-On Electronics has gained recognition as a prominent supplier of RQ6C050UNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6C050UNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6C050UNTR ROHM

RQ6C050UNTR electronic component of ROHM
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See Product Specifications
Part No.RQ6C050UNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6C050UNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6688 ea
Line Total: USD 0.67 
Availability - 7235
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7235
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6688
10 : USD 0.4246
100 : USD 0.2816
500 : USD 0.2222
1000 : USD 0.2035
3000 : USD 0.1551

1623
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 443
Multiples : 1
443 : USD 0.2302
500 : USD 0.2219
1000 : USD 0.2148

2114
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 171
Multiples : 1
171 : USD 0.2389
200 : USD 0.2372
500 : USD 0.2015

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6C050UNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6C050UNTR and other electronic components in the MOSFETs category and beyond.

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RQ6C050UN Datasheet Nch 20V 5A Small Signal MOSFET llOutline SOT-457T V 20V DSS TSMT6 R (Max.) 30m DS(on) I 5.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (TSMT6) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking FD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 5.0 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 10 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20161118 - Rev.003 RQ6C050UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 5.0A - 22 30 GS D V = 2.5V, I = 5.0A - 27 38 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 2.5A - 32 45 GS D V = 1.5V, I = 1.0A - 40 80 GS D R Gate resistance f = 1MHz, open drain - 6.2 - G Forward Transfer *4 Y V = 10V, I = 5A 6.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20161118 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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