X-On Electronics has gained recognition as a prominent supplier of RRL035P03TR MOSFET across the USA, India, Europe, Australia, and various other global locations. RRL035P03TR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RRL035P03TR ROHM

RRL035P03TR electronic component of ROHM
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See Product Specifications
Part No.RRL035P03TR
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 3.5A
Datasheet: RRL035P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

Availability - 4335
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4335
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.36
100 : USD 0.2541
500 : USD 0.2036
1000 : USD 0.1702
3000 : USD 0.1472
9000 : USD 0.1472
24000 : USD 0.1438
45000 : USD 0.1403

1241
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 257
Multiples : 1
257 : USD 0.3974
500 : USD 0.383
1000 : USD 0.3705

2318
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 119
Multiples : 1
119 : USD 0.3429
200 : USD 0.3412
500 : USD 0.2877
1000 : USD 0.2714
2000 : USD 0.2697

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Cnhts
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We are delighted to provide the RRL035P03TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRL035P03TR and other electronic components in the MOSFET category and beyond.

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RRL035P03 Datasheet Pch -30V -3.5A Small Signal MOSFET llOutline SOT-363T V -30V DSS TUMT6 R (Max.) 50m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode. 3) Small surface mount package(TUMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160629 - Rev.001 RRL035P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.5A - 36 50 GS D Static drain - source *4 R V = -4.5V, I = -1.7A - 52 72 m DS(on) GS D on - state resistance V = -4.0V, I = -1.7A - 58 81 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -10V, I = -3.5A 2.3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160629 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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