Product Information

ZVN3306FTA

ZVN3306FTA electronic component of Diodes Incorporated

Datasheet
ZVN3306FTA SOT23 MOSFET
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2418 ea
Line Total: USD 0.24

0 - Global Stock
Ships to you by
Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you by Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

ZVN3306FTA
Diodes Incorporated

1 : USD 0.2418
50 : USD 0.1209
100 : USD 0.1088
500 : USD 0.0907
1000 : USD 0.0816

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Diodes Incorporated"

Image Description
1N4755A electronic component of Diodes Incorporated 1N4755A

Diode Zener Single 43V 5% 1W 2-Pin DO-41
Stock : 1

1N5222B electronic component of Diodes Incorporated 1N5222B

Diode Zener Single 2.5V 5% 500mW 2-Pin DO-35
Stock : 1

1N5262B electronic component of Diodes Incorporated 1N5262B

Diode Zener Single 51V 5% 500mW 2-Pin DO-35
Stock : 1

1N972B electronic component of Diodes Incorporated 1N972B

1N972B diodes zetex
Stock : 1

2W02 electronic component of Diodes Incorporated 2W02

Diode Rectifier Bridge Single 200V 2A 4-Pin Case WOG
Stock : 1

1N4947 electronic component of Diodes Incorporated 1N4947

1N4947 diodes zetex
Stock : 1

1N5350B electronic component of Diodes Incorporated 1N5350B

Diode Zener Single 13V 5% 5W 2-Pin Case 5W
Stock : 1

1N969B electronic component of Diodes Incorporated 1N969B

Diode Zener Single 22V 5% 500mW 2-Pin DO-35 Box
Stock : 1

1N4745A-T electronic component of Diodes Incorporated 1N4745A-T

Diode Zener Single 16V 5% 1W 2-Pin DO-41 T/R
Stock : 1

1.5KE6V8CA-T electronic component of Diodes Incorporated 1.5KE6V8CA-T

TVS Diodes - Transient Voltage Suppressors 1500W 5.8V
Stock : 1

More Products By Category "MOSFET"

Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 31583

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

SVT13N06SA electronic component of Silan SVT13N06SA

MOSFET N Trench 60V 13A (Tc) 2.5V @ 250uA 11 mΩ @ 13A,10V SOP-8 RoHS
Stock : 0

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0

SI1563EDH electronic component of VBsemi Elec SI1563EDH

20V 3.28A 90mO@4.5V,3.28A 1PCSN-Channel&1PCSP-Channel SC-70-6 MOSFETs ROHS
Stock : 1

Additional Infomation About Product

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES *R =5 DS(on) S * 60 Volt V DS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 150 mA amb D Pulsed Drain Current I 3A DM Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source BV 60 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source Threshold V 0.8 2.4 V I =1mA, V =V GS(th) D DS GS Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 0.5 A V =60V, V =0V DSS DS GS Drain Current 50 V =48V, V =0V, T=125C(2) A DS GS On-State Drain Current(1) I 750 mA V =18V, V =10V D(on) DS GS Static Drain-Source On-State R 5 V =10V, I =500mA DS(on) GS D Resistance (1) Forward Transconductance g 150 mS V =18V, I =500mA fs DS D (1)(2) Input Capacitance (2) C 35 pF iss Common Source C 25 pF V =18V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer Capacitance C 8pF rss (2) Turn-On Delay Time (2)(3) t 3typ 5 ns d(on) Rise Time (2)(3) t 4typ 7 ns r V 18V, I =500mA DD D Turn-Off Delay Time (2)(3) t 4typ 6 ns d(off) Fall Time (2)(3) t 5typ 8 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 393Gate Threshold Voltage VGS(th) ZVN3306F TYPICAL CHARACTERISTICS VGS=10V 9V 1.0 10 8V 0.8 8 7V 0.6 6 6V ID= 1A 0.4 5V 4 4V 0.2 2 0.5A 3V 0.25A 0 0 02 4 6 8 10 02 4 6 8 10 VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Saturation Characteristics Voltage Saturation Characteristics 1.0 10 VDS=10V 0.8 5 0.6 ID= 1A 0.5A 0.4 0.25A 0.2 1 0 11020 02 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics On-resistance vs gate-source voltage 2.4 200 2.2 ID=-0.5A 180 2.0 160 1.8 140 1.6 120 VDS=18V 1.4 100 1.2 80 60 1.0 40 0.8 20 0.6 0 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID(on) - Drain Current (Amps) T-Temperature (C) Transconductance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3 - 394 rce R ) Drain-Sou esistance RDS(on RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts) DS(on) Normalised R and VGS(th) ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) gfs-Forward Transconductance (mS)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted