X-On Electronics has gained recognition as a prominent supplier of IRFD110 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFD110 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFD110 Vishay

IRFD110 electronic component of Vishay
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See Product Specifications
Part No.IRFD110
Manufacturer: Vishay
Category: MOSFETs
Description: IRFD110 HEXDIP T/HOLE
Datasheet: IRFD110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4788 ea
Line Total: USD 0.48 
Availability - 0
Ship by Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4788
10 : USD 0.2394
25 : USD 0.2155
50 : USD 0.1795
75 : USD 0.1616

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFD110 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFD110 and other electronic components in the MOSFETs category and beyond.

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IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ( )V = 10 V 0.54 DS(on) GS RoHS* For Automatic Insertion Q (Max.) (nC) 8.3 g COMPLIANT End Stackable Q (nC) 2.3 gs Q (nC) 3.8 175 C Operating Temperature gd Configuration Single Fast Switching and Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable D case style which can be stacked in multiple combinations on S standard 0.1 pin centers. The dual drain serves as a thermal N-Channel MOSFET link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD110PbF Lead (Pb)-free SiHFD110-E3 IRFD110 SnPb SiHFD110 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 1.0 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.71 A A a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I 1.0 A AR a Repetitive Avalanche Energy E 0.13 mJ AR Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 52 mH, R = 25 , I = 2.0 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91127 www.vishay.com S10-2466-Rev. C, 25-Oct-10 1IRFD110, SiHFD110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.60 A - - 0.54 DS(on) GS D b Forward Transconductance g V = 50 V, I = 0.60 A 0.80 - - S fs DS D Dynamic Input Capacitance C - 180 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.8 gd Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A, DD D ns b Turn-Off Delay Time t -1R = 24 , R = 8.4 , see fig. 105- d(off) g D Fall Time t -9.4- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.0 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 8.0 SM S b Body Diode Voltage V T = 25 C, I = 1.0 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.44 0.88 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91127 2 S10-2466-Rev. C, 25-Oct-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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