RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. (PD=1.25w) 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TN z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Code TR Type Basic ordering unit 3000 (pieces) 2 RSQ030P03 1 (1)DRAIN (2)DRAIN (3)GATE (1) (2) (3) (4)SOURCE 1 ESD PROTECTION DIODE (5)DRAIN 2 BODY DIODE (6)DRAIN z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 30 V Gatesource voltage VGSS 20 V Continuous ID 3 A Drain current 1 12 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RSQ030P03 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 V ID=1 , VmA, GS=0V Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V Gate threshold voltage VGS(th) 1.0 V VDS=10V, ID=1mA 2.5 60 80 m ID=3A, VGS=10V 90 125 m ID=3A, VGS=4.5V Static drain-source on-state RDS(on) resistance 100 140 m ID=1.5A, VGS=4.0V Foward transfer admittance Yfs 1.5 S VDS=10V, ID=1.5A Input capacitance Ciss 440 pF VGS=0V VDS=10V, Output capacitance Coss 110 pF f=1MHz Reverse transfer capacitance Crss 80 pF Tur n-on delay time td(on) 10 ns ID=1.5A Rise time tr 13 ns VDD 15V VGS=10V Tur n-off delay time td(off) 40 ns RL=10 RG =10 Fall time tf 12 ns Total gate charge Qg 6.0 nC VDD 15V Gate-source charge Qgs 1.6 nC VGS=5V ID=3A Gate-drain charge Qgd 2.0 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4