ECH8315 Power MOSFET 30V, 25m , 7.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to low on resistance. This devices www.onsemi.com is suitable for applications with low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 25m 10V ESD Diode-Protected Gate 44m 4.5V 30V 7.5A Pb-Free, Halogen Free and RoHS compliance 49m 4V Typical Applications Load Switch ELECTRICAL CONNECTION P-Channel Protection Switch for Lithium-ion Battery 87 6 5 Motor Driver SPECIFICATIONS 1 : Source 2 : Source ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 : Source Parameter SymbolValue Unit 4:Gate 5:Drain Drain to Source Voltage V 30 V DSS 6:Drain 7:Drain Gate to Source Voltage V 20 V GSS 8:Drain Drain Current (DC) I 7.5 A D Drain Current (Pulse) 12 3 4 I 40 DP A PW 10 s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.5 D W 2 (900mm 0.8mm) Junction Temperature Tj 150 C JS Storage Temperature Tstg 55 to +150 C Lot No. Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not TL be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS ORDERING INFORMATION Parameter SymbolValue Unit See detailed ordering and shipping Junction to Ambient information on page 5 of this data sheet. When mounted on ceramic substrate R 83.3 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : April 2015 - Rev. 2 ECH8315/D ECH8315 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 3.5A 5 8.4 S FS DS D R (on)1 I = 3.5A, V = 10V 19 25m DS D GS Static Drain to Source On-State R (on)2 I = 2A, V = 4.5V 31 44 m DS D GS Resistance 35 49 R (on)3 I = 2A, V = 4V m DS D GS Input Capacitance Ciss 875 pF Output Capacitance Coss V = 10V, f=1MHz 200 pF DS Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time t (on) 8.1 ns d Rise Time 33 ns t r See specified Test Circuit Turn-OFF Delay Time t (off) 92 ns d Fall Time 60 ns t f Total Gate Charge Qg 18 nC Gate to Source Charge Qgs 2.1 nC V = 15V, V = 10V, I = 7.5A DS GS D Gate to Drain Miller Charge Qgd 4.7 nC V Forward Diode Voltage I = 7.5A, V=0V 0.82 1.2 V SD S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --15V V DD IN 0V --10V I =--3.5A D V IN R =4.3 L D V OUT PW=10s D.C.1% G ECH8315 P.G 50 S www.onsemi.com 2