ECH8657-TL-H ON Semiconductor

Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET ECH8657 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 35 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =35V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 1.66 S DS D R (on)1 I =2A, V =10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =4.5V 85 119 m DS D GS R (on)3 I =1A, V =4V 110 155 m DS D GS Input Capacitance Ciss 230 pF Output Capacitance Coss V =20V, f=1MHz 37 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 6ns d Rise Time t 11 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 17 ns d Fall Time t 9ns f Total Gate Charge Qg 4.6 nC Gate-to-Source Charge Qgs V =20V, V =10V, I =4.5A 1.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.0 nC Diode Forward Voltage V I =4.5A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V V =20V IN DD 10V 0V I =2A D V IN R =10 L D V OUT PW=10s D.C.1% G ECH8657 P.G 50 S Ordering Information Device Package Shipping memo ECH8657-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1710-2/7