Ordering number : ENA1358B ECH8660 Power MOSFET ECH8660 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 1 1.66 S DS D R (on)1 I =2A, V =10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =4.5V 85 119 m DS D GS R (on)3 I =1A, V =4V 110 155 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 240 pF DS Output Capacitance Coss V =10V, f=1MHz 45 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 30 pF DS Turn-ON Delay Time t (on) See speci ed Test Circuit. 6.2 ns d Rise Time t See speci ed Test Circuit. 11 ns r Turn-OFF Delay Time t(off) See speci ed Test Circuit. 17 ns d Fall Time t See speci ed Test Circuit. 7.5 ns f Total Gate Charge Qg V =10V, V =10V, I =4.5A 4.4 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =4.5A 1.1 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =4.5A 0.64 nC DS GS D Diode Forward Voltage V I =4.5A, V =0V 0.84 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2A 2.5 4.2 S DS D R (on)1 I =--2A, V =--10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--4.5V 71 100 m DS D GS R (on)3 I =--1A, V =--4V 82 115 m DS D GS Input Capacitance Ciss V =--10V, f=1MHz 430 pF DS Output Capacitance Coss V =--10V, f=1MHz 105 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 75 pF DS Turn-ON Delay Time t (on) See speci ed Test Circuit. 7.5 ns d Rise Time t See speci ed Test Circuit. 26 ns r Turn-OFF Delay Time t(off) See speci ed Test Circuit. 45 ns d Fall Time t See speci ed Test Circuit. 35 ns f Total Gate Charge Qg V =--10V, V =--10V, I =--4.5A 10 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--4.5A 2.0 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--10V, I =--4.5A 2.5 nC DS GS D Diode Forward Voltage V I =--4.5A, V =0V --0.85 --1.2 V SD S GS Switching Time Test Circuit N-channel P-channel V =15V V = --15V V V IN DD IN DD 10V 0V 0V --10V I =2A I = --2A D D V V IN IN R =7.5 R =7.5 L L D V D V OUT OUT PW=10s PW=10s D.C.1% D.C.1% G G ECH8660 ECH8660 P.G P.G 50 S 50 S No. A1358-2/8