RRQ030P03 Pch -30V -3A Power MOSFET Datasheet lOutline (6) V -30V DSS TSMT6 (5) (4) R (Max.) 75mW DS(on) I (1) -3A D (2) P 1.25W (3) D lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UA lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 3 A D *2 Pulsed drain current A I 12 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 1/11Data Sheet RRQ030P03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA - - V -30 (BR)DSS GS D voltage V I = -1mA Breakdown voltage (BR)DSS D - - mV/C -25 temperature coefficient T referenced to 25C j Zero gate voltage drain current I V = -30V, V = 0V - - -1 mA DSS DS GS I V = 20V, V = 0V Gate - Source leakage current - - 10 mA GSS GS DS Gate threshold voltage V V = -10V, I = -1mA - V -1.0 -2.5 GS (th) DS D V Gate threshold voltage I = -1mA (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -3A - 55 75 GS D V = -4.5V, I = -1.5A - 85 115 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -1.5A - 95 125 GS D V = -10V, I = -3A, T =125C - 95 125 GS D j Gate input resistannce R f = 1MHz, open drain - 24 - W G *5 Transconductance g V = -10V, I = -3A 2.4 5.0 - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 2/11