X-On Electronics has gained recognition as a prominent supplier of RS1G260MNTB MOSFET across the USA, India, Europe, Australia, and various other global locations. RS1G260MNTB MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RS1G260MNTB ROHM

RS1G260MNTB electronic component of ROHM
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See Product Specifications
Part No.RS1G260MNTB
Manufacturer: ROHM
Category: MOSFET
Description: Trans MOSFET N-CH 40V 26A Automotive 8-Pin HSOP EP T/R
Datasheet: RS1G260MNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8515 ea
Line Total: USD 1.85

Availability - 2385
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 3.8004
10 : USD 3.7157
30 : USD 3.6605
100 : USD 3.6053

2385
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.8515
10 : USD 1.587
100 : USD 1.2995
250 : USD 1.196
500 : USD 1.1155
1000 : USD 0.9706
2500 : USD 0.9223

   
Manufacturer
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Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
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Operating Temperature Classification
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Type
Rad Hardened
Polarity
Drain-Source On-Volt
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Number Of Elements
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We are delighted to provide the RS1G260MNTB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G260MNTB and other electronic components in the MOSFET category and beyond.

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RS1G260MN Datasheet Nch 40V 80A Power MOSFET llOutline V 40V DSS R (Max.) 3.3m DS(on) HSOP8 I 80A D P 35W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G260MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 26 A a D *2 I Pulsed drain current 104 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 26 A AS *3 E Avalanche energy, single pulse 52 mJ AS *1 P 35 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171018 - Rev.002 RS1G260MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.57 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 26A - 2.4 3.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 26A - 3.2 4.4 GS D Gate resistance R f=1MHz, open drain - 2.2 - G Forward Transfer *5 Y V = 10V, I = 26A 20 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171018 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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