X-On Electronics has gained recognition as a prominent supplier of RS1L145GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1L145GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1L145GNTB ROHM

RS1L145GNTB electronic component of ROHM
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Part No.RS1L145GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 60V 47A POWER
Datasheet: RS1L145GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.87 ea
Line Total: USD 1.87 
Availability - 1515
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1515
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.87
10 : USD 1.518
100 : USD 1.133
500 : USD 0.9691
1000 : USD 0.9691
2500 : USD 0.9306

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1L145GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1L145GNTB and other electronic components in the MOSFETs category and beyond.

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RS1L145GN Datasheet Nch 60V 47A Power MOSFET llOutline V 60V DSS R (Max.) 9.7m DS(on) HSOP8 I 47A D P 31W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1L145GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 47 A c D Continuous drain current T = 25C I 14.5 A a D *2 I Pulsed drain current 58 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 14.5 A AS *3 E Avalanche energy, single pulse 31 mJ AS *1 P 31 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RS1L145GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = V , I = 200A Gate threshold voltage 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) Gate threshold voltage D - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 14.5A - 6.7 9.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 14.5A - 9.6 14.1 GS D R Gate resistance f=1MHz, open drain - 2.2 - G Forward Transfer *5 Y V = 5V, I = 14.5A 16.7 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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