RRH075P03 Pch -30V -7.5A Power MOSFET Datasheet Outline (5) V SOP8 30V DSS (6) (7) (8) R (Max.) 21m DS(on) (4) I 7.5A D (3) (2) P 2.0W D (1) Features Inner circuit (8) (7) (6) (5) 1) Low on - resistance. (1) Source (5) Drain (2) Source (6) Drain 2) Built-in G-S Protection Diode. (3) Source (7) Drain (4) Gate (8) Drain *2 3) Small Surface Mount Package (SOP8). *1 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE (1) (2) (3) (4) Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 12 DC/DC Converter Type Basic ordering unit (pcs) 2,500 Taping code TB Marking RRH075P03 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V 30 DSS *1 Continuous drain current I 7.5 A D *2 Pulsed drain current I 30 A D,pulse V Gate - Source voltage V 20 GSS *3 Avalanche energy, single pulse E 0.5 mJ AS *4 2.0 W P D Power dissipation *5 P 0.65 W D T Junction temperature 150 C j T Range of storage temperature C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.06 - Rev.D 1/11Data Sheet RRH075P03 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient - - 62.5 C/W R thJA *5 Thermal resistance, junction - ambient R - - 192 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 -- V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 25 - mV/ C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current -- 1 A DSS DS GS Gate - Source leakage current I V = 20V, V = 0V -- 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1 - 2.5 V GS (th) DS D V Gate threshold voltage I = 1mA (GS)th D -3.9 - mV/ C temperature coefficient T referenced to 25C j V = 10V, I = 7.5A -15 21 GS D V = 4.5V, I = 4A -22 31 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.0V, I = 4A -25 35 GS D V = 10V, I = 7.5A, T =125C -23 33 GS D j R Gate input resistannce f = 1MHz, open drain - 4 - G *6 Transconductance V = 10V, I = 7.5A 918 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = 15V, Rg = 25, starting T = 25C DD j *4 Mounted on a seramic board (30300.8mm) *5 Mounted on a FR4 (20200.8mm) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.06 - Rev.D 2/11