X-On Electronics has gained recognition as a prominent supplier of RRH100P03GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRH100P03GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRH100P03GZETB ROHM

RRH100P03GZETB electronic component of ROHM
RRH100P03GZETB ROHM
RRH100P03GZETB MOSFETs
RRH100P03GZETB  Semiconductors

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See Product Specifications
Part No. RRH100P03GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET MOSFET Pch -30V -10A
Datasheet: RRH100P03GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.275 ea
Line Total: USD 1.27 
Availability - 12993
Ship by Thu. 01 May to Mon. 05 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12993
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 1.275
10 : USD 1.1532
100 : USD 0.8976
250 : USD 0.8976
500 : USD 0.7909
1000 : USD 0.7744
2500 : USD 0.7436

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RRH100P03GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRH100P03GZETB and other electronic components in the MOSFETs category and beyond.

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RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline (5) V SOP8 -30V DSS (6) (7) (8) R (Max.) 12.6mW DS(on) (4) I -10A D (3) (2) P 2.0W D (1) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) Built-in G-S Protection Diode. (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 12 DC/DC Converter Type Basic ordering unit (pcs) 2,500 Taping code TB Marking RRH100P03 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 10 A D *2 Pulsed drain current A I 40 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse E 0.8 mJ AS *4 2.0 W P D Power dissipation *5 P 0.65 W D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2017.08 - Rev.D 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 1/11Datasheet RRH100P03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - - 62.5 C/W thJA *5 Thermal resistance, junction - ambient R - - 192 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -10A - 9.0 12.6 GS D V = -4.5V, I = -5A - 12.5 17.5 GS D Static drain - source *6 R m W DS(on) on - state resistance V = -4.0V, I = -5A - 14.0 19.6 GS D V = -10V, I = -10A, T =125C - 14.0 20.0 GS D j R Gate input resistannce f = 1MHz, open drain - 3.0 - W G *6 Transconductance V = -10V, I = -10A 13 26 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L 10mH, V = -15V, Rg = 25 W, starting T = 25C DD j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (20200.8mm) www.rohm.com 2017.08 - Rev.D 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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