X-On Electronics has gained recognition as a prominent supplier of RQ6E045BNTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E045BNTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6E045BNTCR ROHM

RQ6E045BNTCR electronic component of ROHM
RQ6E045BNTCR ROHM
RQ6E045BNTCR MOSFETs
RQ6E045BNTCR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RQ6E045BNTCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6E045BNTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 4174
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4174
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.3553
100 : USD 0.1782
1000 : USD 0.1606
3000 : USD 0.1353
9000 : USD 0.1188
24000 : USD 0.1188
45000 : USD 0.1133

582
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 223
Multiples : 1
223 : USD 0.291
245 : USD 0.2649
500 : USD 0.2275

1109
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 281
Multiples : 1
281 : USD 0.3627
500 : USD 0.3496
1000 : USD 0.3382

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6E045BNTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E045BNTCR and other electronic components in the MOSFETs category and beyond.

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RQ6E045BN Datasheet Nch 30V 4.5A Power MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 30m DS(on) TSMT6 I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code T CR Marking ZQ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 4.5 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 4.5 A AS *3 E Avalanche energy, single pulse 1.5 mJ AS *4 P Power dissipation 1.25 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ6E045BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - 100 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 4.5A - 21 30 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 4.5A - 35 49 GS D Forward Transfer *5 Y V = 5V, I = 4.5A 2.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 100H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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