X-On Electronics has gained recognition as a prominent supplier of RQ6E055BNTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E055BNTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6E055BNTCR ROHM

RQ6E055BNTCR electronic component of ROHM
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Part No.RQ6E055BNTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V 5.5A Power MOSFET
Datasheet: RQ6E055BNTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4741 ea
Line Total: USD 0.47 
Availability - 2894
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2894
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.4411
100 : USD 0.3135
500 : USD 0.2596
1000 : USD 0.2442
3000 : USD 0.2365
6000 : USD 0.2343
9000 : USD 0.2266

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ6E055BNTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E055BNTCR and other electronic components in the MOSFETs category and beyond.

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RQ6E055BN Datasheet Nch 30V 5.5A Power MOSFET llOutline TSMT6 V 30V DSS R (Max.) 25m DS(on) I 5.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking HH llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 5.5 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 2.2 mJ AS *3 I Avalanche current 5.5 A AS *4 P Power dissipation 1.25 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20141001 - Rev.001 RQ6E055BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 100 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 5.5A - 19 25 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 5.5A - 30 39 GS D *5 g Transconductance V = 5V, I = 5.5A 3.4 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 100H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20141001 - Rev.001 2014 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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