IPDD60R150G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of 10 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 6 the improved thermal properties of the DDPAK package to enable a tab possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 5 Features C7 Gold gives best in class FOM R *E and R *Q . DS(on) oss DS(on) g Suitable for hard and soft switching (PFC and high performance LLC) C7 Gold technology enables best in class RDS(on) in smallest footprint. th DDPAK package has inbuilt 4 pin Kelvin Source configuration and low parasitic source inductance (~3nH). DDPAK package is MSL1 compliant, total Pb-free and has easy visual Drain Pin 6-10, Tab inspection leads. DDPAK SMD package combined with lead free die attach process enables improved thermal performance (R th). *1 Gate Pin 1 Driver Source Benefits Power Pin 2 Source Pin 3,4,5 C7 Gold FOM RDS(on)*Qg is 15% better than previous C7 600V enabling *1: Internal body diode faster switching leading to higher efficiency. Possibility to increasse economies of scales by usage in PFC and PWM topologies in the application. 2 C7 Gold can reach 50m in DDPAK 115mm footprint, whereas previous 2 2 BIC C7 600V was 40m in 150mm D PAK footprint. Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. DDPAK package is easy to use and has the highest quality standards. Improved thermals enable SMD DDPAK package to be used in higher current designs than has been previously possible. Potential applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 150 m Q 23 nC g,typ I 45 A D,pulse I T<150C 23 A D,continuous j E 400V 2.74 J oss Body diode di/dt 700 A/s Type / Ordering Code Package Marking Related Links IPDD60R150G7 PG-HDSOP-10 60R150G7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-10-27600V CoolMOS G7 SJ Power Device IPDD60R150G7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-10-27