X-On Electronics has gained recognition as a prominent supplier of RQ6E085BNTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E085BNTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6E085BNTCR ROHM

Name: RQ6E085BNTCR
Brand: ROHM
SKU: RQ6E085BNTCR_ROHM
Availability: InStock
Rating: 5 (11 reviews)

RQ6E085BNTCR electronic component of ROHM

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See Product Specifications

Part No.	RQ6E085BNTCR
Manufacturer:	ROHM
Category:	MOSFETs
Description:	MOSFET Nch 30V 8.5A Si MOSFET
Datasheet:	RQ6E085BNTCR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8184 ea
Line Total: USD 0.82

Availability - 3737
Ship by Fri. 03 Jan to Tue. 07 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

RQ6E085BNTCR More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

87

Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ : 1
Multiples : 1

1 : USD 0.8236
10 : USD 0.7454
30 : USD 0.7024
100 : USD 0.655
500 : USD 0.6329
1000 : USD 0.6231

3737

Ship by Fri. 03 Jan to Tue. 07 Jan

MOQ : 1
Multiples : 1

1 : USD 0.8184
10 : USD 0.6798
100 : USD 0.5181
500 : USD 0.4279
1000 : USD 0.3971
3000 : USD 0.3795
6000 : USD 0.3641

Specifications

Manufacturer

ROHM ROHM

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

8.5 A 8.5 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

11.1 mOhms 11.1 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.25 W 1.25 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 457 - 6 SOT - 457 - 6

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

32.7 nC 32.7 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Rohm Semiconductor Rohm Semiconductor

Forward Transconductance - Min

8 S 8 S

Fall Time

31 ns 31 ns

Product Type

Mosfet Mosfet

Rise Time

16 ns 16 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

70 ns 70 ns

Typical Turn-On Delay Time

11 ns 11 ns

Notes:- Show Stocked Products With Similar Attributes.

RQ6E085BNTCR Alternative Parts

We are delighted to provide the RQ6E085BNTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E085BNTCR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The RQ6E085BNTCR is an N-channel power MOSFET (short for metal oxide semiconductor field effect transistor) manufactured by ROHM. It is a 30V 8.5A Si MOSFET that features low on-resistance, fast switching speed, and low output capacitance in a miniature, surface mount package. It operates at a voltage of 30V and has a continuous drain current of up to 8.5A and a gate-source voltage range of ±20V. It is suitable for use in high current switching and DC-to-DC converters. This device has low gate charge and ensures low EMI (electromagnetic interference).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Availability	Price	Buy Price	Quantity
87 Ship by Tue. 14 Jan to Fri. 17 Jan MOQ : 1 Multiples : 1	1 : USD 0.8236 10 : USD 0.7454 30 : USD 0.7024 100 : USD 0.655 500 : USD 0.6329 1000 : USD 0.6231

3737 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 0.8184 10 : USD 0.6798 100 : USD 0.5181 500 : USD 0.4279 1000 : USD 0.3971 3000 : USD 0.3795 6000 : USD 0.3641

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