X-On Electronics has gained recognition as a prominent supplier of RQ6E085BNTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E085BNTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6E085BNTCR ROHM

RQ6E085BNTCR electronic component of ROHM
RQ6E085BNTCR ROHM
RQ6E085BNTCR MOSFETs
RQ6E085BNTCR Semiconductors

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See Product Specifications
Part No. RQ6E085BNTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V 8.5A Si MOSFET
Datasheet: RQ6E085BNTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8995 ea
Line Total: USD 0.9 
Availability - 3737
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1

 RQ6E085BNTCR More Buying Options & Price Grid(s)

Availability Price Quantity
87
Ship by Tue. 22 Apr to Fri. 25 Apr
MOQ : 1
Multiples : 1
1 : USD 1.8102
10 : USD 1.6415
30 : USD 1.1938
100 : USD 1.112
500 : USD 1.0766
1000 : USD 1.0599

3737
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8995
10 : USD 0.7173
100 : USD 0.5011
500 : USD 0.4139
1000 : USD 0.3841
3000 : USD 0.367
6000 : USD 0.3522

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ6E085BNTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E085BNTCR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The RQ6E085BNTCR is an N-channel power MOSFET (short for metal oxide semiconductor field effect transistor) manufactured by ROHM. It is a 30V 8.5A Si MOSFET that features low on-resistance, fast switching speed, and low output capacitance in a miniature, surface mount package. It operates at a voltage of 30V and has a continuous drain current of up to 8.5A and a gate-source voltage range of ±20V. It is suitable for use in high current switching and DC-to-DC converters. This device has low gate charge and ensures low EMI (electromagnetic interference).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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