TSM250N02D Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 5.8A, 25m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Halogen-free V 20 V DS Suited for 1.8V drive applications V = 4.5V 25 GS Low profile package V = 2.5V R (max) 35 m GS DS(on) APPLICATION V = 1.8V 55 GS Battery Pack Q 7.7 nC g Load Switch TDFN 2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 V DS Gate-Source Voltage V 10 V GS T = 25C 5.8 C (Note 1) Continuous Drain Current I A D T = 100C 3.48 C (Note 2) Pulsed Drain Current I 23.2 A DM Total Power Dissipation T = 25C P 0.62 W C DTOT Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R 200 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. R is guaranteed by design while JA JA R is determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. CA JA , Document Number: DS P0000063 1 Version: B15 TSM250N02D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V DS GS D GS(TH) 0.4 0.6 0.8 V Gate Body Leakage V = 10V, V = 0V I -- -- GS DS GSS 100 nA -- -- Zero Gate Voltage Drain Current V =16V, V =0V I 1 A DS GS DSS V = 4.5V, I = 4A -- 20 25 GS D V = 2.5V, I = 3A -- Drain-Source On-State Resistance R 27 35 m GS D DS(on) V = 1.8V, I = 2A -- 39 55 GS D Forward Transconductance V =10V, I =3A g -- 6.5 -- S DS D fs (Note 4) Dynamic Total Gate Charge Q -- 11 7.7 g V = 10V, I = 4A, DS D Gate-Source Charge Q -- 1 0.9 nC gs V = 4.5V GS Gate-Drain Charge Q -- 5 2.4 gd 775 Input Capacitance C -- 535 iss V = 10V, V = 0V, DS GS Output Capacitance C -- 85 oss 60 pF f = 1.0MHz Reverse Transfer Capacitance C -- 50 rss 34 (Note 5) Switching Turn-On Delay Time t -- 8 4.1 d(on) Turn-On Rise Time t -- 22 11.6 V = 10V, I = 1A, r DD D ns V = 4.5V, R = 25 45 Turn-Off Delay Time t -- 23.9 GS G d(off) Turn-Off Fall Time t -- 14 f 7.6 (Note 3) Source-Drain Diode Continuous Source Current -- -- 5.8 A V =V =0V, I S G D Force Current Pulsed Source Current A -- -- 23.2 I SM Forward On Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. Pulse test: PW 300s, duty cycle 2%. 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS P0000063 2 Version: B15