X-On Electronics has gained recognition as a prominent supplier of IPA60R099C7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA60R099C7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA60R099C7XKSA1 Infineon

IPA60R099C7XKSA1 electronic component of Infineon
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Part No.IPA60R099C7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPA60R099C7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.851 ea
Line Total: USD 4.85 
Availability - 479
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
479
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 4.851
10 : USD 3.509
100 : USD 2.684
250 : USD 2.607
500 : USD 2.497

   
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We are delighted to provide the IPA60R099C7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA60R099C7XKSA1 and other electronic components in the MOSFETs category and beyond.

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The IPA60R099C7XKSA1 is a MOSFET HIGH POWER_NEW manufactured by Infineon for use in high-power switching applications. This MOSFET features a max drain-source voltage of 60V, a RDS(on) resistance of 0.099ohms, an ID of 25A, an improved avalanche ruggedness and an optimized thermal behavior. It is also RoHS compliant. The device has been designed to offer high efficiency, low switching losses and excellent thermal performance, allowing designers to create devices with higher power density and superior performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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