TSM2537CQ Taiwan Semiconductor N- and P-Channel 20V (D-S) Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER TYPE VALUE UNIT DS(ON) Low gate charge for fast power switching N-ch 20 V DS V Compliant to RoHS directive 2011/65/EU and in P-ch -20 accordance to WEEE 2002/96/EC V = 4.5V 30 GS Halogen-free according to IEC 61249-2-21 V = 2.5V N-ch 36 GS V = 1.8V 42 R GS DS(on) APPLICATIONS m (max) V = -4.5V 55 GS Load Switch V = -2.5V P-ch 78 GS Power Management V = -1.8V 90 GS Portable Devices N-ch 9.1 Q g nC P-ch 9.8 TDFN22 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL N-ch P-ch UNIT Drain-Source Voltage V 20 -20 V DS Gate-Source Voltage V 12 12 V GS T = 25C 11.6 -9 C (Note 1) Continuous Drain Current I A D T = 25C 6.4 -5 A Pulsed Drain Current I 46.4 -36 A DM T = 25C 6.25 6.25 C Total Power Dissipation P W D T = 125C 1.25 1.25 C T = 25C 1.89 1.89 A Total Power Dissipation P W D T = 125C 0.38 0.38 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT R Thermal Resistance Junction to Case JC 20 C/W Thermal Resistance Junction to Ambient R 66 JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1610 TSM2537CQ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static V = 0V, I = 250A N-ch 20 -- -- Drain-Source Breakdown GS D BV V DSS Voltage V = 0V, I = -250A P-ch -20 -- -- GS D V = V , I = 250A N-ch 0.5 0.8 1 GS DS D Gate Threshold Voltage V V GS(TH) V = V , I = -250A P-ch -0.45 -0.7 -1 GS DS D V = 12V, V = 0V N-ch -- -- 100 Gate-Source Leakage GS DS I nA GSS Current V = 12V, V = 0V P-ch -- -- 100 GS DS V = 0V, V = 20V -- -- 1 GS DS V = 0V, V = 20V N-ch GS DS -- -- 100 Drain-Source Leakage T = 125C J I A DSS Current V = 0V, V = -20V -- -- -1 GS DS V = 0V, V = -20V P-ch GS DS -- -- -100 T = 125C J V = 4.5V, I = 6.4A -- 17 30 GS D V = 2.5V, I = 5.8A N-ch -- 22 36 GS D V = 1.8V, I = 5.4A -- 32 42 Drain-Source On-State GS D R m DS(on) (Note 2) Resistance V = -4.5V, I = -5A -- 48 55 GS D V = -2.5V, I = -4.2A P-ch -- 60 78 GS D V = -1.8V, I = -3.9A -- 78 90 GS D N-ch V = 5V, I = 6.4A -- 28 -- Forward DS D g S fs (Note 2) P-ch Transconductance V = -5V, I = -5A -- 15 -- DS D (Note 3) Dynamic N-ch -- 9.1 -- N-ch Total Gate Charge Q g -- -- P-ch 9.8 V = 4.5V, GS -- -- V = 10V, I = 6.4A N-ch 1.3 DS D Gate-Source Charge Q nC gs -- -- P-ch P-ch 1.1 V = -4.5V, -- -- N-ch 2.7 GS Gate-Drain Charge Q gd V = -10V, I = -5A -- -- DS D P-ch 2.7 -- -- N-ch 677 N-ch Input Capacitance C iss P-ch -- 744 -- V = 0V, V = 10V GS DS -- -- f = 1.0MHz N-ch 120 Output Capacitance C pF oss -- -- P-ch P-ch 106 V = 0V, V = -10V -- -- Reverse Transfer N-ch 89 GS DS C rss f = 1.0MHz -- -- Capacitance P-ch 97 -- -- N-ch 3 Gate Resistance f = 1.0MHz R g -- -- P-ch 80 2 Version: A1610