X-On Electronics has gained recognition as a prominent supplier of RQ7E055ATTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ7E055ATTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ7E055ATTCR ROHM

RQ7E055ATTCR electronic component of ROHM
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Part No.RQ7E055ATTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -30V -5.5A Si MOSFET
Datasheet: RQ7E055ATTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9669 ea
Line Total: USD 0.97 
Availability - 3256
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3256
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9669
10 : USD 0.7997
100 : USD 0.6006
500 : USD 0.4895
1000 : USD 0.4576
3000 : USD 0.4378
6000 : USD 0.429
24000 : USD 0.4279

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ7E055ATTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ7E055ATTCR and other electronic components in the MOSFETs category and beyond.

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RQ7E055AT Datasheet Pch -30V -5.5A Middle Power MOSFET llOutline V -30V DSS R (Max.) 24.5m DS(on) TSMT8 I 5.5A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking JQ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 5.5 A D *2 I Pulsed drain current 22 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I -5.5 A AS *3 E Avalanche energy, single pulse 22.0 mJ AS *4 P 1.5 W D Power dissipation *5 P 1.1 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160317 - Rev.004 RQ7E055AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 83.3 /W thJA Thermal resistance, junction - ambient *5 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -5.5A - 19.3 24.5 GS D Static drain - source *6 R m DS(on) on - state resistance V = -4.5V, I = -5.5A - 28.2 36.1 GS D R Gate resistance f = 1MHz, open drain - 4.9 - G Forward Transfer *6 Y V = -5V, I = -5.5A 5.2 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic boad (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2/11 20160317 - Rev.004 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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