X-On Electronics has gained recognition as a prominent supplier of RQ3E070BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E070BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E070BNTB ROHM

RQ3E070BNTB electronic component of ROHM
RQ3E070BNTB ROHM
RQ3E070BNTB MOSFETs
RQ3E070BNTB  Semiconductors

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See Product Specifications
Part No. RQ3E070BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4.5V Drive Nch MOSFET
Datasheet: RQ3E070BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6237 ea
Line Total: USD 0.62 
Availability - 1837
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1837
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6237
10 : USD 0.3863
100 : USD 0.1872
1000 : USD 0.1529
3000 : USD 0.1243
9000 : USD 0.1133
24000 : USD 0.1133
45000 : USD 0.1078

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3E070BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E070BNTB and other electronic components in the MOSFETs category and beyond.

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RQ3E070BN Datasheet Nch 30V 15A Power MOSFET llOutline V 30V DSS R (Max.) 27m DS(on) HSMT8 I 15A D P 13W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E070BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 15 A c D Continuous drain current T = 25C I 7 A a D *2 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 9.0 A AS *3 E Avalanche energy, single pulse 4.0 mJ AS *1 P 13 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RQ3E070BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 9.6 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 20 27 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 7A - 29 39 GS D Gate resistance R f=1MHz, open drain - 3.2 - G Forward Transfer *5 Y V = 5V, I = 7A 4 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 24V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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