X-On Electronics has gained recognition as a prominent supplier of RQ3E100ATTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E100ATTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E100ATTB ROHM

RQ3E100ATTB electronic component of ROHM
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Part No.RQ3E100ATTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -31A POWER
Datasheet: RQ3E100ATTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8165 ea
Line Total: USD 0.82 
Availability - 2427
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2427
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8165
10 : USD 0.675
100 : USD 0.514
500 : USD 0.4278
1000 : USD 0.3944
3000 : USD 0.3772
6000 : USD 0.3622
24000 : USD 0.3611

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3E100ATTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E100ATTB and other electronic components in the MOSFETs category and beyond.

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RQ3E100AT Datasheet Pch -30V -31A Power MOSFET llOutline V -30V DSS R (Max.) 11.4m DS(on) HSMT8 I 31A D P 17W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E100AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS *1 T = 25C I 31 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -10 A AS *3 E Avalanche energy, single pulse 36 mJ AS *1 P 17 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 RQ3E100AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 7.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -10A - 9.0 11.4 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -10A - 13.1 16.7 GS D R Gate resistance f=1MHz, open drain - 3.1 - G Forward Transfer *5 Y V = -5V, I = -10A 10 - - S fs DS D Admittance *1T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.5mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu boad (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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