RQ3E100AT Datasheet Pch -30V -31A Power MOSFET llOutline V -30V DSS R (Max.) 11.4m DS(on) HSMT8 I 31A D P 17W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E100AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS *1 T = 25C I 31 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -10 A AS *3 E Avalanche energy, single pulse 36 mJ AS *1 P 17 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 RQ3E100AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 7.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -10A - 9.0 11.4 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -10A - 13.1 16.7 GS D R Gate resistance f=1MHz, open drain - 3.1 - G Forward Transfer *5 Y V = -5V, I = -10A 10 - - S fs DS D Admittance *1T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.5mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu boad (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.