X-On Electronics has gained recognition as a prominent supplier of RQ3E130BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E130BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E130BNTB ROHM

RQ3E130BNTB electronic component of ROHM
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Part No.RQ3E130BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 13A 8-Pin HSMT EP T/R
Datasheet: RQ3E130BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7062 ea
Line Total: USD 0.71 
Availability - 2614
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2614
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7062
10 : USD 0.4521
100 : USD 0.3047
500 : USD 0.2453
1000 : USD 0.2255
3000 : USD 0.187
9000 : USD 0.1771
24000 : USD 0.1727

1099
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 40
Multiples : 1
40 : USD 1.027
60 : USD 0.6792
100 : USD 0.4355
200 : USD 0.434
500 : USD 0.3364
1000 : USD 0.3023

77
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 80
Multiples : 1
80 : USD 1.3889

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Mounting
Operating Temp Range
Type
Polarity
Drain-Source On-Volt
Number Of Elements
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Power Dissipation
Pin Count
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3E130BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E130BNTB and other electronic components in the MOSFETs category and beyond.

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RQ3E130BN Datasheet Nch 30V 39A Power MOSFET llOutline V 30V DSS R (Max.) 6.0m DS(on) HSMT8 I 39A D P 16W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E130BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 39 A c D Continuous drain current T = 25C I 13 A a D *2 I Pulsed drain current 52 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 17 A AS *3 E Avalanche energy, single pulse 49 mJ AS *1 P 16 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 RQ3E130BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 7.8 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 13A - 4.4 6.0 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 13A - 6.7 9.4 GS D Gate resistance R f=1MHz, open drain - 2.0 - G Forward Transfer *5 Y V = 5V, I = 13A 14 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 24V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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