X-On Electronics has gained recognition as a prominent supplier of RQ3E150GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E150GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3E150GNTB ROHM

RQ3E150GNTB electronic component of ROHM
RQ3E150GNTB ROHM
RQ3E150GNTB MOSFETs
RQ3E150GNTB  Semiconductors

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See Product Specifications
Part No. RQ3E150GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 15A (Ta) 2W (Ta), 17.2W (Tc) Surface Mount 8-HSMT (3.2x3)
Datasheet: RQ3E150GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.75 ea
Line Total: USD 0.75 
Availability - 7015
Ship by Thu. 01 May to Mon. 05 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2654
Ship by Mon. 12 May to Thu. 15 May
MOQ : 1
Multiples : 1
1 : USD 0.4754
10 : USD 0.413
30 : USD 0.3886
100 : USD 0.267
500 : USD 0.231
1000 : USD 0.2237

7015
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 0.75
10 : USD 0.515
100 : USD 0.3508
250 : USD 0.3223
500 : USD 0.2651
1000 : USD 0.2376
3000 : USD 0.187
6000 : USD 0.1848

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3E150GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E150GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3E150GN Datasheet Nch 30V 39A Middle Power MOSFET llOutline V 30V DSS R (Max.) 6.1m DS(on) HSMT8 I 39A D P 17W D llInner circuit llFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E150GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 39 A c D Continuous drain current T = 25C I 15 A a D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 15 A AS *3 E Avalanche energy, single pulse 17 mJ AS *1 P 17 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.003 RQ3E150GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 7.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 4.7 6.1 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 15A - 6.2 8.8 GS D R Gate resistance f=1MHz, open drain - 1.6 - G Forward Transfer *5 Y V = 5V, I = 15A 13.5 - - S fs DS D Admittance *1 Tc = 25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20160517 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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