X-On Electronics has gained recognition as a prominent supplier of RQ5E035BNTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5E035BNTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5E035BNTCL ROHM

RQ5E035BNTCL electronic component of ROHM
RQ5E035BNTCL ROHM
RQ5E035BNTCL MOSFETs
RQ5E035BNTCL  Semiconductors

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See Product Specifications
Part No. RQ5E035BNTCL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ5E035BNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4125 ea
Line Total: USD 0.41 
Availability - 6210
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2492
Ship by Fri. 28 Mar to Wed. 02 Apr
MOQ : 5
Multiples : 5
5 : USD 0.4238
50 : USD 0.3407
150 : USD 0.2353
500 : USD 0.2009
3000 : USD 0.1857
6000 : USD 0.1765

6210
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4125
10 : USD 0.2538
100 : USD 0.1536
500 : USD 0.1067
1000 : USD 0.0957
3000 : USD 0.0814
6000 : USD 0.0748
9000 : USD 0.066
24000 : USD 0.0616

632
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 334
Multiples : 1
334 : USD 0.3056
500 : USD 0.2946

9352
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 411
Multiples : 1
411 : USD 0.2691

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
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Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ5E035BNTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E035BNTCL and other electronic components in the MOSFETs category and beyond.

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RQ5E035BN Datasheet Nch 30V 3.5A Power MOSFET llOutline TSMT3 V 30V DSS R (Max.) 37m DS(on) I 3.5A D P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking ZS llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 3.5 A D *2 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 1.9 mJ AS *3 I Avalanche current 3.5 A AS *4 P Power dissipation 1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140314 - Rev.002 RQ5E035BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 125 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 20.84 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.25 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.5A - 28 37 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 3.5A - 43 56 GS D R Gate input resistance - 2.8 - G *5 g V = 5V, I = 3.5A Transconductance 2.4 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 200H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20140314 - Rev.002 2014 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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