RQ5E040AJ Datasheet Nch 30V 4A Middle Power MOSFET llOutline TSMT3 V 30V DSS R (Max.) 37m DS(on) I 4.0A D (SC-96) P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power Package (TSMT3). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking FK llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 16 A D,pulse V Gate - Source voltage 12 V GSS *2 E Avalanche energy, single pulse 1.2 mJ AS *2 I Avalanche current 4.0 A AS *3 P Power dissipation 1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150316 - Rev.001 RQ5E040AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 125 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -2.0 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 27 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = 2.5V, I = 4.0A - 39 54 GS D R Gate input resistance f=1MHz, open drain - 2.5 - G Forward Transfer *4 Y V = 5V, I = 4A 4.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 Mounted on a ceramic boad (30300.8mm) *4 Pulsed www.rohm.com 2/11 20150316 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.