X-On Electronics has gained recognition as a prominent supplier of RQ5E040AJTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5E040AJTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5E040AJTCL ROHM

RQ5E040AJTCL electronic component of ROHM
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See Product Specifications
Part No.RQ5E040AJTCL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NPN Low VCE(sat) Transistor
Datasheet: RQ5E040AJTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6039 ea
Line Total: USD 0.6 
Availability - 5820
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6039
10 : USD 0.3927
100 : USD 0.2629
500 : USD 0.2079
1000 : USD 0.1903
3000 : USD 0.1683
9000 : USD 0.1617
24000 : USD 0.1573

14069
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 90
Multiples : 1
90 : USD 0.455
129 : USD 0.317
200 : USD 0.3152
500 : USD 0.247
1000 : USD 0.2145
3000 : USD 0.2032
6000 : USD 0.1934
12000 : USD 0.182

1399
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 293
Multiples : 1
293 : USD 0.3484
500 : USD 0.3359
1000 : USD 0.3249

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RQ5E040AJTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E040AJTCL and other electronic components in the MOSFETs category and beyond.

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RQ5E040AJ Datasheet Nch 30V 4A Middle Power MOSFET llOutline TSMT3 V 30V DSS R (Max.) 37m DS(on) I 4.0A D (SC-96) P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power Package (TSMT3). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking FK llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 16 A D,pulse V Gate - Source voltage 12 V GSS *2 E Avalanche energy, single pulse 1.2 mJ AS *2 I Avalanche current 4.0 A AS *3 P Power dissipation 1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150316 - Rev.001 RQ5E040AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 125 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -2.0 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 27 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = 2.5V, I = 4.0A - 39 54 GS D R Gate input resistance f=1MHz, open drain - 2.5 - G Forward Transfer *4 Y V = 5V, I = 4A 4.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 Mounted on a ceramic boad (30300.8mm) *4 Pulsed www.rohm.com 2/11 20150316 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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