RQ5H030TNTL ROHM

RQ5H030TN Datasheet Nch 45V 3A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 67m DS(on) TSMT3 I 3A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PV llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 3 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170202 - Rev.002 RQ5H030TN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3A - 48 67 GS D Static drain - source *4 R V = 4V, I = 3A - 53 74 m DS(on) GS D on - state resistance V = 2.5V, I = 3A - 68 95 GS D R Gate resistance f = 1MHz, open drain - 6.7 - G Forward Transfer *4 Y V = 10V, I = 3A 2.8 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20170202 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.