X-On Electronics has gained recognition as a prominent supplier of RQ5H030TNTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5H030TNTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5H030TNTL ROHM

RQ5H030TNTL electronic component of ROHM
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See Product Specifications
Part No.RQ5H030TNTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 45V 3A SMALL SIGNAL
Datasheet: RQ5H030TNTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5489 ea
Line Total: USD 0.55 
Availability - 55847
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6067
10 : USD 0.5453
30 : USD 0.5111
100 : USD 0.4731
500 : USD 0.4556
1000 : USD 0.4478

55847
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5489
10 : USD 0.528
100 : USD 0.3443
500 : USD 0.2871
1000 : USD 0.2783
3000 : USD 0.2585
6000 : USD 0.2475
9000 : USD 0.2409

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ5H030TNTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5H030TNTL and other electronic components in the MOSFETs category and beyond.

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RQ5H030TN Datasheet Nch 45V 3A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 67m DS(on) TSMT3 I 3A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PV llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 3 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170202 - Rev.002 RQ5H030TN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3A - 48 67 GS D Static drain - source *4 R V = 4V, I = 3A - 53 74 m DS(on) GS D on - state resistance V = 2.5V, I = 3A - 68 95 GS D R Gate resistance f = 1MHz, open drain - 6.7 - G Forward Transfer *4 Y V = 10V, I = 3A 2.8 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20170202 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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