TK7R7P10PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK7R7P10PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 13 nC (typ.) SW (3) Small output charge: Q = 47 nC (typ.) oss (4) Low drain-source on-resistance: R = 6.5 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.5 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK Start of commercial production 2018-01 2017-2021 2021-01-27 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK7R7P10PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 55 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 79 D Drain current (pulsed) (t = 100 s) (Note 1) I 230 DP Power dissipation (T = 25 ) P 93 W c D Single-pulse avalanche energy (Note 3) E 27 mJ AS Single-pulse avalanche current (Note 3) I 55 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.60 /W c th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by silicon chip capability. Note 3: V = 80 V, T = 25 (initial), L = 7.1 H, I = 55 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 6. Electrical Characteristics 6.1. Static Characteristics (T = 25 unless otherwise specified) a Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 20 V, V = 0 V 0.1 A GSS GS DS Drain cut-off current I V = 100 V, V = 0 V 10 DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 100 V (BR)DSS D GS Drain-source breakdown voltage (Note 4) V I = 10 mA, V = -20 V 65 (BR)DSX D GS Gate threshold voltage V V = 10 V, I = 0.5 mA 1.5 2.5 th DS D Drain-source on-resistance R V = 4.5 V, I = 16 A 8.2 11.5 m DS(ON) GS D V = 10 V, I = 27.5 A 6.5 7.7 GS D Note 4: If a reverse bias is applied between gate and source, this device enters V mode. Note that the drain- (BR)DSX source breakdown voltage is lowered in this mode. 2017-2021 2021-01-27 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0