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X-On Electronics has gained recognition as a prominent supplier of MCAC53N06Y-TP MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCAC53N06Y-TP MOSFETs are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCAC53N06Y-TP Micro Commercial Components (MCC)

MCAC53N06Y-TP electronic component of Micro Commercial Components (MCC)
MCAC53N06Y-TP Micro Commercial Components (MCC)
MCAC53N06Y-TP MOSFETs
MCAC53N06Y-TP  Semiconductors

Images are for reference only
See Product Specifications
Part No. MCAC53N06Y-TP
Manufacturer: Micro Commercial Components (MCC)
Category: MOSFETs
Description: MOSFET N-Ch 60Vds 20Vgs 470pF 0.85Vsd 65Vdss
Datasheet: MCAC53N06Y-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6271 ea
Line Total: USD 0.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.3789

0
Ship by Thu. 16 Jan to Tue. 21 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6271
10 : USD 0.5718
30 : USD 0.545
100 : USD 0.5164
500 : USD 0.3423
1000 : USD 0.3346

0
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.144
10 : USD 0.7777
100 : USD 0.5401
500 : USD 0.4477
1000 : USD 0.3751
5000 : USD 0.3597
10000 : USD 0.3443

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCAC53N06Y-TP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCAC53N06Y-TP and other electronic components in the MOSFETs category and beyond.

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MCAC53N06Y Features Split Gate Trench Power MV MOSFET Technology Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C (Note 2) DFN5060 Thermal Resistance: 17C/W Junction to Ambient(t 10s) (Note2,3) Thermal Resistance: 55C/W Junction to Ambient(Steady-State) Thermal Resistance: 1.8C/W Junction to Case(Steady-State) Parameter Symbol Rating Unit Drain-Source Voltage V 60 V DS D H B A Gate-Source Volltage V 20 V GS T =25C 53 A PIN 1 Continuous Drain C G I J D (Note 4) C Current T =100C 34 A N C (Note 5) I 110 A Pulsed Drain Current DM E F (Note 5) E 195 mJ Single Pulse Avalanche Energy AS K T =25C 70 W Total Power C P D M (Note 2) Dissipation T =100C 28 W L C Note: 1.Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2.The Value of R is Measured with the Device Mounted on 1in FR4 Board with JA 2oz. Copper, in a Still Air Environment with T =25C. The Power Dissipation P is DIMENSIONS A DSM Based on R t 10s and the Maximum Allowed Junction Temperature of 150C. The INCHES MM JA DIM NOTE MIN MAX MIN MAX Value in Any Given Application Depends on the User s Specific Board Design. A 0.031 0.047 0.80 1.20 3.The R is the Sum of the Thermal Impedance from Junction to Case R and Case JA JC 0.010 0.254 B TYP. to Ambient. C 0.193 0.222 4.90 5.64 4.The Maximum Current Rating is Package Limited. D 0.232 0.250 5.90 6.35 5.Single Pulse Width Limited by Junction Temperature T =175C. J(MAX) E 0.148 0.167 3.75 4.25 F 0.126 0.154 3.20 3.92 G 0.189 0.213 4.80 5.40 Internal Structure H 0.222 0.239 5.65 6.06 K 0.045 0.059 1.15 1.50 D D D D J 0.012 0.020 0.30 0.50 8 7 6 5 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 1 2 3 4 S S S G Rev.3-4-12252021 1/4 MCCSEMI.COMMCAC53N06Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 65 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS V =60V, V =0V 1 DS GS Zero Gate Voltage Drain Current I A DSS V =60V, V =0V,T =55C 5 DS GS J V V =V , I =250A Gate-Threshold Voltage 1.1 1.7 2.5 V GS(th) DS GS D V =10V, I =20A 5.3 7.5 GS D R Drain-Source On-Resistance m DS(on) V =4.5V, I =10A 6.9 9.5 GS D Forward Tranconductance g V =5V, I =20A 30 S FS DS D V V =0V, I =20A Diode Forward Voltage 0.85 0.99 V SD GS S Continuous Body Diode Current I 53 A S Dynamic Characteristics Input Capacitance C 1988 iss C V =30V,V =0V,f=1MHz Output Capacitance 470 pF oss DS GS C Reverse Transfer Capacitance 14 rss R V =0V,V =0V,f=1MHz Gate Resistance 1.6 g DS GS Switching Characteristics Total Gate Charge Q V =30V,V =4.5V,I =20A 16 g DS GS D Q Total Gate Charge 31 g V =30V,V =10V,I =20A Gate-Source Charge Q 6 nC DS GS D gs Q Gate-Drain Charge 5 gd Reverse Recovery Chrage Q 58 rr I =20A, di/dt=500A/s S t Reverse Recovery Time 17 rr Turn-On Delay Time t 10.5 d(on) t ns Turn-On Rise Time 4.5 r V =10V, V =15V, R =2.5, GS DS L R =3 GEN Turn-Off Delay Time t 29.5 d(off) t Turn-Off Fall Time 8 f Rev.3-4-12252021 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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