DMTH43M8LPS Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 3.3m V = 10V 100A GS And Robust End Application 40V 5.0m V = 5V 95A GS Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation N-Channel Enhancement Mode MOSFET is Qualified to AEC-Q101 Standards for High Reliability designed to minimize R yet maintain superior switching DS(ON), An Automotive-Compliant Part is Available Under Separate performance. Datasheet (DMTH43M8LPSQ) Mechanical Data Applications Case: PowerDI 5060-8 BLDC Motors Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Loadswitch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D S D D G Top View Top View Internal Schematic Bottom View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH43M8LPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH43M8LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 22 A Continuous Drain Current, V = 10V (Note 5) I A GS D 15.5 T = +100C A T = +25C 100 C A Continuous Drain Current, V = 10V (Note 6) (Note 9) I GS D 82 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 350 A DM 69 Maximum Continuous Body Diode Forward Current (Note 6) I A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 350 A SM Avalanche Current, L = 1mH I 13.2 A AS Avalanche Energy, L = 1mH 87 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.7 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 5) 55 C/W R JA Total Power Dissipation (Note 6) 83 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 1.8 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 2.5 V V = V , I = 250A GS(TH) DS GS D 2.7 3.3 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 3.6 5.0 V = 5V, I = 15A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2,693 ISS V = 30V, V = 0V, DS GS Output Capacitance C 1,172 pF OSS f = 1MHz Reverse Transfer Capacitance 52 C RSS Gate Resistance 2.54 R V = 0V, V = 0V, f = 1MHz G DS GS 38.5 Total Gate Charge (V = 10V) Q GS G 17.6 Total Gate Charge (V = 4.5V) Q GS G nC V = 30V, I = 20A DS D Gate-Source Charge 6.9 Q GS Gate-Drain Charge Q 6.9 GD Turn-On Delay Time t 5.2 D(ON) Turn-On Rise Time t 5.7 R V = 30V, V = 10V, DD GS ns Turn-Off Delay Time t 23.5 I = 20A, R = 3 D(OFF) D G Turn-Off Fall Time t 11 F Body Diode Reverse Recovery Time 35.4 ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 32.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limit. 2 of 7 DMTH43M8LPS February 2018 Diodes Incorporated www.diodes.com Document number: DS38751 Rev. 5 - 2