MCM1208 Features Advanced Trench MOSFET Process Technology Ultra Low On-Resistance With Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C DFN2020-6J Thermal Resistance: 357C/W Junction to Ambient Parameter Symbol Rating Unit * ) Drain-Source Voltage V -12 V DS ( Gate-Source Volltage V 8 V + GS Continuous Drain Current I -8 A D (Note 2) I -28 A Pulsed Drain Current DM 2 4 44 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, 4 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0 2. Pulse Width Limited by Maximum Junction Temperature. 1 - . , Internal Structure 4 3 4 D D S 6 5 4 DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX 1 2 3 A 0.028 0.032 0.700 0.800 D D G 0.008 0.203 B TYP. Marking: 1208 C 0.000 0.002 0.000 0.050 D 0.076 0.082 1.924 2.076 E 0.076 0.082 1.924 2.076 F 0.031 0.039 0.800 1.000 G 0.033 0.041 0.850 1.050 H 0.008 0.016 0.200 0.400 J 0.008 ----- 0.200 ----- K 0.018 0.026 0.460 0.660 L 0.026 0.650 TYP. M 0.010 0.014 0.250 0.350 N 0.007 0.013 0.174 0.326 Rev.3-3-12012020 1/4 MCCSEMI.COMMCM1208 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -12 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =-12V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 2) V V =V , I =-250A -0.4 -1 V Gate-Threshold Voltage GS(th) DS GS D V =-4.5V, I =-5A 28 GS D V =-3.7V, I =-4.6A 32 GS D (Note 2) R V =-2.5V, I =-4.3A m Drain-Source On-Resistance 40 DS(on) GS D V =-1.8V, I =-1A 63 GS D V =-1.5V, I =-0.5A 150 GS D (Note 2) g V =-5V, I =-5A 18 S Forward Tranconductance FS DS D (Note 3) Dynamic Characteristics Input Capacitance C 1275 iss C V =-6V,V =0V,f=1MHz Output Capacitance 255 pF oss DS GS C Reverse Transfer Capacitance 236 rss R V =0V,V =0V,f=1MHz Gate Resistance 1.9 19 g DS GS Q 21 Total Gate Charge 14 g Q V =-6V,V =-4.5V,I =-5A Gate-Source Charge 2.3 gs DS GS D nC Q Gate-Drain Charge 3.6 gd Reverse Recovery Chrage Q 8 16 rr I =-4A, di/dt=100A/s F t 48 Reverse Recovery Time 24 rr Turn-On Delay Time t 26 40 d(on) t 40 ns Turn-On Rise Time 24 r V =-6V,V =-4.5V,I =-4A DD GEN D R =6,R =1 L GEN Turn-Off Delay Time t 45 70 d(off) t 35 Turn-Off Fall Time 20 f Drain-Source Body Diode Characteristics I Continuous Body Diode Current -8 S A Pulsed Diode Forward Current I -28 SM V I =-4A, V =0V Body Diode Voltage -1.2 V SD S GS Note: 2. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM