MCMN2012 Features TrenchFET Power MOSFET Epoxy meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix designates RoHS Compliant. See ordering information) N-Channel MOSFET Maximum Ratings o o DFN2020-6J Operating Junction Temperature Range : -55 C to +150 C o o Storage Temperature Range: -55 C to +150 C o (Note 2) Maximum Thermal Resistance: 88 C/W Junction to Ambient * ) Parameter Rating Symbol Unit ( Drain -Source Voltage V 20 V + DS Gate-Source Volltage V 10 V GS Drain Current I 12 A D 2 44 4 (Note3) Drain Current-Pulse I 40 A DM 4 0 Note: 1 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, - <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds , 4 3 4 Internal Structure DIMENSIONS D D S 6 5 4 INCHES MM DIM NOTE MIN MAX MIN MAX A 0.028 0.032 0.700 0.800 0.008 0.203 B TYP. C 0.000 0.002 0.000 0.050 D 0.076 0.082 1.924 2.076 1 2 3 E 0.076 0.082 1.924 2.076 Marking: N2012 D D G F 0.031 0.039 0.800 1.000 G 0.033 0.041 0.850 1.050 H 0.008 0.016 0.200 0.400 J 0.008 ----- 0.200 ----- K 0.018 0.026 0.460 0.660 L 0.026 0.650 TYP. M 0.010 0.014 0.250 0.350 N 0.007 0.013 0.174 0.326 Rev.3-4- 03202020 1/4 MCCSEMI.COMMCMN2012 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V V =0V, I =250A V 20 (BR)DSS GS D (Note 4) V V =V , I =250A 0.35 0.7 1.0 V GS(th) DS GS D Gate-Threshold Voltage I V = 10V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS I V =20V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS V =4.5V, I =5A 10 15 GS D Drain-Source On-Resistance R V =2.5V, I =5A m 13 18 DS(on) GS D V =1.8V, I =5A 18 30 GS D (Note 4) V =4V, I =9.7A g 20 S Forward Tranconductance FS DS D Diode Forward Voltage V V =0V, I =10A V 1.2 SD GS S (Note 5) Dynamic Characteristics C Input Capacitance 1800 iss V =4V,V =0V, f=1MHz Output Capacitance C pF DS GS 650 oss C Reverse Transfer Capacitance 450 rss Gate Resistance R f=1MHz 2.5 g (Note 5) Switching Characteristics t Turn-On Delay Time 12 20 d(on) Turn-On Rise Time t 10 15 r V =4V,V =4.5V,R =0.4, DD GEN L ns I =10A,R =1 D G t Turn-Off Delay Time 65 100 d(off) Turn-Off Fall Time t 20 30 f Total Gate Charge Q 32 g V =4V,Vgs=5V,I =10A nC Gate-Source Chage Q DS D 2.5 gs Gage-Drain Charge Q 6.5 gd Note: 2. Surface Mounted On FR4 Board Using The Minimum Pad Size,1oz Copper. 3. Surface Mounted On FR4 Board Using 1 Square Inch Pad Size, 1oz Copper. 4. Pulse Test: Pulse Width300s,Duty Cycle2%. 5. These Parameters Have No Way To Verify. Rev.3-4- 03202020 2/4 MCCSEMI.COM