MCM1216-TP Micro Commercial Components (MCC)

MCM1216 Features Advanced Trench MOSFET Process Technology Ultra Low On-Resistance with Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C (Note 2) DFN2020-6J Thermal Resistance: 50C/W Junction to Ambient (Note 2) Thermal Resistance: 6.9C/W Junction to Case Parameter Symbol Rating Unit * ) Drain-Source Voltage V -12 V DS ( + Gate-Source Volltage V 8 V GS Continuous Drain Current I -16 A D (Note 3) I -65 A 2 Pulsed Drain Current DM 4 44 (Note 4) 4 2.5 T =25C A 0 Total Power Dissipation P W D (Note 5) 18 T =25C C 1 - Note: . , 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4 3 4 2. Surface Mounted on FR4 Board, t<10 sec. 3. Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature. 4. This Test is Performed With No Heat Sink at T =25C. A 5. This Test is Performed With Infinite Heat Sink at T =25C. C DIMENSIONS INCHES MM DIM NOTE Internal Structure MIN MAX MIN MAX A 0.028 0.032 0.700 0.800 D D S 0.008 0.203 B TYP. 6 5 4 C 0.000 0.002 0.000 0.050 D 0.076 0.082 1.924 2.076 E 0.076 0.082 1.924 2.076 F 0.031 0.039 0.800 1.000 G 0.033 0.041 0.850 1.050 1 2 3 Marking:1216 H 0.008 0.016 0.200 0.400 D D G J 0.008 ----- 0.200 ----- K 0.018 0.026 0.460 0.660 L 0.026 0.650 TYP. M 0.010 0.014 0.250 0.350 N 0.007 0.013 0.174 0.326 Rev.3-3-12012020 1/4 MCCSEMI.COMMCM1216 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -12 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =-12V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 6) V V =V , I =-250A -0.4 -0.7 -1 V GS(th) DS GS D Gate-Threshold Voltage V =-4.5V, I =-6.7A 21 GS D (Note 6) R m Drain-Source On-Resistance DS(on) V =-2.5V, I =-6.2A 27 GS D V V =0V, I =-8A V Diode Forward Voltage -1.2 SD GS S (Note 6) g V =-10V, I =-6.7A 40 S FS DS D Forward tranconductance (Note 7) Dynamic Characteristics C Input Capacitance 2700 iss V =-10V,V =0V,f=1MHz Output Capacitance C 680 pF oss DS GS C Reverse Transfer Capacitance 590 rss V =-6V,V =-8V,I =-10A 60 100 DS GS D Q Total Gate Charge g 48 35 nC V =-6V,V =-4.5V,I =-10A Gate-Source Charge Q 5 gs DS GS D Gate-Drain Charge Q 10 gd Note 6. Pulse Test : Pulse Width300s, Duty Cycle 2%. 7. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM