SI2300 Features High Dense Cell Design for Extremely Low R DS(ON) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-23 Thermal Resistance: 125C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain -Source Voltage 20 V DS 3 Gate -Source Voltage V 10 V GS B C I 4.5 A Drain Current-Continuous D 1 2 F E Power Dissipation P 1.0 D W Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking:S0 G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COM 5 ,1 6285&(SI2300 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D (Note 2) Gate-Threshold Voltage V V =V , I =250A V 0.5 0.7 0.9 GS(th) DS GS D I V = 10V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS 19.5 25 V =4.5V, I =4.5A GS D (Note 2) Drain-Source On-Resistance R DS(on) m V =2.5V, I =4.0A 25 38 GS D g V =5V, I =4.5A 5.0 Forward Transconductance S FS DS D (Note 3) Dynamic Characteristics C Input Capacitance iss 482 C V =10V,V =0V, f=1MHz pF 85 Output Capacitance oss DS GS Reverse Transfer Capacitance C 52 rss (Note 3) Switching Characteristics t 13 d(on) Turn-On Delay Time V =10V,R =2.8,V =4.5V, DD L GS t 54 ns r Turn-On Rise Time I =1A , R =6 D GEN t 18 d(off) Turn-Off Delay Time Turn-Off Fall Time t 11 f 4.2 Total Gate Charge Q g V =10V,I =4.5A,V =4.5V DS D GS 0.9 nC Gate-Source Charge Q gs Gate-Drain Charge Q 1.4 gd Source-Drain Diode characteristics Drain-Source Diode Forward A 4.5 V =0V,I =1A I S GS S Current V 1.2 Diode Forward voltage V =0V,I =1A 0.8 V SD GS S Notes: 2. Pulse Test: Pulse Width300A, Duty Cycle2%. 3. These Parameters Have No Way to Verify. Rev.3-3-12012020 2/4 MCCSEMI.COM