Green DMT10H025SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C C and Robust End Application 41.2A 23m V = 10V GS Low R Minimizes Power Losses DS(ON) 100V 36.1A 30m V = 6V Low Q Minimizes Switching Losses GS G Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management Mechanical Data applications. Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMT10H025SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H025SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 41.2 A Continuous Drain Current, V = 10V I GS D 32.9 T = +70C C 160 A Pulsed Drain Current (10s Pulse, T =+25C, Package Limited) I C DM Maximum Continuous Body Diode Forward Current (Note 6) 45 A I S 160 A Pulsed Body Diode Forward Current (10s Pulse, T =+25C, Package Limited ) I C SM Avalanche Current, L = 0.1mH (Note 8) 7.5 A I AS Avalanche Energy, L = 0.1mH (Note 8) 2.8 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 81 C/W R JA Total Power Dissipation (Note 6) 2.5 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 46 R JA C/W Thermal Resistance, Junction to Case 2.1 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 17.8 23 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 22.9 30 V = 6V, I = 20A GS D Diode Forward Voltage V 0.9 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1544 C iss V = 50V, V = 0V DS GS Output Capacitance 250 pF C oss f = 1MHz Reverse Transfer Capacitance 20.4 C rss Gate Resistance 1.26 R V = 0V, V = 0V, f = 1MHz g DS GS 21.4 Total Gate Charge (V = 10V) Q GS g Total Gate Charge (V = 6V) Q 13.4 GS g nC VDD = 50V, ID = 20A Gate-Source Charge Q 4.6 gs Gate-Drain Charge Q 6.0 gd Turn-On Delay Time t 8.2 D(ON) Turn-On Rise Time t 11.2 R V = 50V, V = 10V, DD GS ns Turn-Off Delay Time 27.5 I = 20A, R = 11 t D g D(OFF) Turn-Off Fall Time 13.7 t F Reverse Recovery Time 37.5 ns t RR I = 20A, di/dt = 100A/s F Reverse Recovery Charge 50.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H025SK3 July 2018 Diodes Incorporated www.diodes.com Document number: DS40266 Rev. 4 - 2 ADVANCED INFORMATION