X-On Electronics has gained recognition as a prominent supplier of TK7S10N1Z,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK7S10N1Z,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK7S10N1Z,LQ Toshiba

TK7S10N1Z,LQ electronic component of Toshiba
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Part No.TK7S10N1Z,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK
Datasheet: TK7S10N1Z,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.7541 ea
Line Total: USD 3.75 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 3.7541
10 : USD 1.4024
100 : USD 1.046
500 : USD 0.8451
1000 : USD 0.8078
2000 : USD 0.6866
10000 : USD 0.6732

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Technology
Number of Channels
Vgs - Gate-Source Voltage
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We are delighted to provide the TK7S10N1Z,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK7S10N1Z,LQ and other electronic components in the MOSFETs category and beyond.

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TK7S10N1Z MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1ZTK7S10N1ZTK7S10N1ZTK7S10N1Z 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 40 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (4) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) a aaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 7 A D Drain current (pulsed) (Note 1) I 21 DP Power dissipation (T = 25) (Note 2) P 50 W c D Single-pulse avalanche energy (Note 3) E 19.6 mJ AS Single-pulse avalanche current I 7 A AS Turn-off dV /dt ruggedness dV /dt 8.4 V/ns DS DS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-01 2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TK7S10N1Z 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 3.0 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: V = 80 V, T = 25 (initial), L = 307 H, R = 25 , I = 7 A DD ch G AS Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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