ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (V = 5V) 2.0A Logic Level Input (3.3V and 5V) IN Short Circuit Protection with Auto Restart Clamping Energy 490mJ Over Voltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Description Over-current Protection Input Protection (ESD) TM The ZXMS6005DG is a self protected low side IntelliFET MOSFET High Continuous Current Rating with logic level input. It integrates over-temperature, over-current, Lead-Free Finish RoHS Compliant (Notes 1 & 2) over-voltage (active clamp) and ESD protected logic level Halogen and Antimony Free. Green Device (Note 3) functionality. The ZXMS6005DG is ideal as a general purpose switch An Automotive-Compliant Part is Available Under Separate driven from 3.3V or 5V microcontrollers in harsh environments where Datasheet (ZXMS6005DGQ) standard MOSFETs are not rugged enough. Mechanical Data Applications Case: SOT223 (Type DN) Lamp Driver Case Material: Molded Plastic, Green Molding Compound. Motor Driver UL Flammability Classification Rating 94V-0 Relay Driver Moisture Sensitivity: Level 1 per J-STD-020 Solenoid Driver e3 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) SOT223 (Type DN) D S D D IN IN S Top View Top View Device Symbol Pin Out Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXMS6005DGTA ZXMS6005D 7 12 1,000 Units Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See ZXMS6005DG Functional Block Diagram dV/dt Limitation Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Continuous Drain-Source Voltage V 60 V DS Drain-Source Voltage for Short Circuit Protection V 24 V DS(SC) Continuous Input Voltage V -0.5 to +6 V IN No limit Continuous Input Current -0.2V V 6V IN mA I IN I 2 Continuous Input Current V < -0.2V or V > 6V IN IN IN 5 A Pulsed Drain Current V = 3.3V I IN DM Pulsed Drain Current V = 5V I 6 A IN DM Continuous Source Current (Body Diode) (Note 5) I 2.5 A S Pulsed Source Current (Body Diode) I 10 A SM Unclamped Single Pulse Inductive Energy, E 490 mJ AS T = +25C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) 4000 V V ESD Charged Device Model 1000 V V CDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation at T = +25C (Note 5) 1.3 W A P D 10.4 mW/C Linear Derating Factor 3.0 W Power Dissipation at T = +25C (Note 6) A P D 24 mW/C Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) 96 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) R 42 C/W JA Thermal Resistance, Junction to Case (Note 7) R 12 C/W JC Operating Temperature Range T -40 to +150 C J Storage Temperature Range T -55 to +150 C STG Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR-4 board, in still air conditions. 6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR-4 board, in still air conditions. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. 2 of 8 ZXMS6005DG September 2018 Diodes Incorporated www.diodes.com Document number: DS32247 Rev. 4 - 2